Abstract: While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic and has not yet been put into practical use. According to the invention, by treating the fine porous diamond particle film with an aqueous solution of a salt of a metal such as barium and calcium, the carbonate or sulfate of which is insoluble or less soluble, and a hydrophobic agent such as hexamethyl disilazane or trimethyl monochlolo silane, as well as a reinforcing agent containing one of dichlorotetramethyl disiloxane or dimethoxytetramethyl disiloxane, thereby capable of putting the dielectric breakdown voltage and the leak current within a specified range of a practical standard.

Abstract: While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic and has not yet been put into practical use. According to the invention, by treating the fine porous diamond particle film with an aqueous solution of a salt of a metal such as barium and calcium, the carbonate or sulfate of which is insoluble or less soluble, and a hydrophobic agent such as hexamethyl disilazane or trimethyl monochlolo silane, as well as a reinforcing agent containing one of dichlorotetramethyl disiloxane or dimethoxytetramethyl disiloxane, thereby capable of putting the dielectric breakdown voltage and the leak current within a specified range of a practical standard.

Abstract: While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic and has not yet been put into practical use. According to the invention, by treating the fine porous diamond particle film with an aqueous solution of a salt of a metal such as barium and calcium, the carbonate or sulfate of which is insoluble or less soluble, and a hydrophobic agent such as hexamethyl disilazane or triethyl monochloro silane, as well as a reinforcing agent containing one of dichlorotetramethyl disiloxane or dimethoxytetramethyl disiloxane, thereby capable of putting the dielectric breakdown voltage and the leak current within a specified range of a practical standard.

Abstract: Diamond fine particles having porous structure known in a high thermal resistance and low dielectric constant film has a high thermal conductivity and is expected as an insulating film for multiplayer wirings of a semiconductor integrated circuit device. A liquid composition of diamond fine particles, which are raw material of the film, is unstable as colloid, resulting in low reproducibility and yield in the production of films. It becomes possible to impart a very low viscosity and improved stability to the colloid liquid composition of diamond fine particles by containing a small amount of amine. If necessary, a thickener may be used to adjust the viscosity appropriately, so that various kinds of application systems can be used. A low dielectric constant film having a relative dielectric constant of about 2.5 can be thus obtained. Further, the liquid composition may be utilized as an abrasive for finishing.

Abstract: The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium solution to the surface a silicon substrate in which at least the silicon surface is locally exposed.

Abstract: Diamond fine particles having porous structure known in a high thermal resistance and low dielectric constant film has a high thermal conductivity and is expected as an insulating film for multiplayer wirings of a semiconductor integrated circuit device. A liquid composition of diamond fine particles, which are raw material of the film, is unstable as colloid, resulting in low reproducibility and yield in the production of films. It becomes possible to impart a very low viscosity and improved stability to the colloid liquid composition of diamond fine particles by containing a small amount of amine. If necessary, a thickener may be used to adjust the viscosity appropriately, so that various kinds of application systems can be used. A low dielectric constant film having a relative dielectric constant of about 2.5 can be thus obtained. Further, the liquid composition may be utilized as an abrasive for finishing.

Abstract: While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic and has not yet been put into practical use. According to the invention, by treating the fine porous diamond particle film with an aqueous solution of a salt of a metal such as barium and calcium, the carbonate or sulfate of which is insoluble or less soluble, and a hydrophobic agent such as hexamethyl disilazane or triethyl monochlolo silane, as well as a reinforcing agent containing one of dichlorotetramethyl disiloxane or dimethoxytetramethyl disiloxane, thereby capable of putting the dielectric breakdown voltage and the leak current within a specified range of a practical standard.

Abstract: A method of producing a buried-type multilayer interconnection structure is provided. The method comprises steps of: forming a hole portion in an insulating layer; forming a catalyst layer having average film thickness from 0.2 nm to 10 nm on a surface of the hole portion by a physical vapor deposition method; forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst; and burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.

Abstract: The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium solution to the surface a silicon substrate in which at least the silicon surface is locally exposed.

Abstract: The present invention is to provide a process for forming the embedded wires having the higher density and the finer pitch without using catalyzing agent in an economical manner. The electroless plating process of copper according to the present invention includes steps of preparing a substrate, and forming a metal nitride layer containing high melting-point metal on the substrate. The metal nitride layer has a stabilized nitride layer in the vicinity of a top surface thereof. The stabilized nitride layer has a composition ratio of nitrogen atoms over oxygen atoms, which is about 0.4 or more. The process also includes a step of immersing the substrate into a plating solution containing copper so as to displace high melting-point metal contained in the metal nitride layer by copper, thereby forming an electroless copper plating layer on the metal nitride layer.

Abstract: A method of producing a buried-type multilayer interconnection structure is provided. The method comprises steps of: forming a hole portion in an insulating layer; forming a catalyst layer having average film thickness from 0.2 nm to 10 nm on a surface of the hole portion by a physical vapor deposition method; forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst; and burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.

Abstract: A method of manufacturing an embedded multilevel interconnection, comprising the steps of: forming a hole portion in an insulating layer; forming a barrier metal film mainly made of tantalum and nitrogen in such a manner that the barrier metal film covers at least an inner wall of the hole portion, an element composition ratio (N/Ta) of nitrogen to tantalum contained in the barrier metal film being 0.3 or higher but 1.5 or lower; removing an oxide film formed on a surface of the barrier metal film; and immersing the barrier metal film in a plating liquid comprising copper and thereby forming an electroless copper plating film on the barrier metal film.

Abstract: The present invention is to provide a process for forming the embedded wires having the higher density and the finer pitch without using catalyzing agent in an economical manner. The electroless plating process of copper according to the present invention includes steps of preparing a substrate, and forming a metal nitride layer containing high melting-point metal on the substrate. The metal nitride layer has a stabilized nitride layer in the vicinity of a top surface thereof. The stabilized nitride layer has a composition ratio of nitrogen atoms over oxygen atoms, which is about 0.4 or more. The process also includes a step of immersing the substrate into a plating solution containing copper so as to displace high melting-point metal contained in the metal nitride layer by copper, thereby forming an electroless copper plating layer on the metal nitride layer.

Abstract: A vacuum depositing apparatus for forming a vapor-deposited film by evaporation of a material to be vapor deposited onto the surface of a substrate under vacuum, whereby mechanisms are provided to prevent impurities, due to contamination in the vacuum vessel or impurities caused by thermal deterioration of the material, from mixing with and contaminating the vapor-deposited film.