Abstract: According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.

Abstract: According to one embodiment, a high frequency semiconductor integrated circuit includes a first input terminal, a second input terminal, a first output terminal, a second output terminal, first to fourth switch circuits. In a case where a coupling destination of the first input terminal is switched from the first output terminal to the second output terminal, a third switching operation changing the third switch circuit from an ON state to an OFF state and a fourth switching operation changing the fourth switch circuit from the OFF state to the ON state are finished, after a first switching operation changing the first switch circuit from the ON state to the OFF state and a second switching operation changing the second switch circuit from the OFF state to the ON state are finished.

Abstract: A semiconductor device includes an input terminal, an output terminal, and a plurality of transistors. The transistors are coupled through serial coupling. The transistors include a first transistor and a second transistor. The first transistor has a first end and a second end. The second transistor has a third end, a fourth end, a first gate, and a first body. The third end is coupled to the second end. The semiconductor device further includes a third transistor and a first diode. The third transistor and the first diode are serially coupled between the first body and the first end. The third transistor includes a second gate coupled to the first gate.

Abstract: According to one embodiment, a radio frequency switch of a Single-Pole-n-Throw (SPnT) type includes a first RF terminal, a second RF terminal, a single RF common terminal, first MOS transistors, termination resistors, and second MOS transistors. The first MOS transistors are respectively provided between the first RF terminal and the RF common terminal and between the second RF terminal and the RF common terminal. Each of the termination resistors is configured to be connected to the first RF terminal or the second RF terminal in a selected state where a corresponding one of the first MOS transistors is in an OFF state. The second MOS transistors are connected in parallel to the respective termination resistors, and each of the second MOS transistors is configured to be controlled in a same manner as a corresponding one of the first MOS transistors.

Abstract: According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.

Abstract: According to one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first end, a second end, and a first body. The second transistor includes a third end coupled to the second end, a fourth end, and a second body. The semiconductor device includes a first resistor coupled to the first end, a second resistor coupled between the first resistor and the second end, a third resistor coupled to the third end, a fourth resistor coupled between the third resistor and the fourth end, a first diode coupled between the first body and a node coupling the third resistor and the fourth resistor, and a second diode coupled between the second body and a node coupling the first resistor and the second resistor.

Abstract: According to one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first end, a second end, and a first body. The second transistor includes a third end coupled to the second end, a fourth end, and a second body. The semiconductor device includes a first resistor coupled to the first end, a second resistor coupled between the first resistor and the second end, a third resistor coupled to the third end, a fourth resistor coupled between the third resistor and the fourth end, a first diode coupled between the first body and a node coupling the third resistor and the fourth resistor, and a second diode coupled between the second body and a node coupling the first resistor and the second resistor.

Abstract: In general, according to one embodiment, a semiconductor device includes an input terminal, an output terminal, and a plurality of transistors. The transistors are coupled through serial coupling. The transistors include a first transistor and a second transistor. The first transistor has a first end and a second end. The second transistor has a third end, a fourth end, a first gate, and a first body. The third end is coupled to the second end. The semiconductor device further includes a third transistor and a first diode. The third transistor and the first diode are serially coupled between the first body and the first end. The third transistor includes a second gate coupled to the first gate.

Abstract: A variable capacitance circuit has a plurality of series circuits connected in parallel. The plurality of series circuits comprise a plurality of switches having different off-capacitances of powers of two with respect to a reference capacitance, and a plurality of capacitors connected in series to the plurality of switches and having different capacitances of powers of two with respect to a reference capacitance.

Abstract: A semiconductor device includes a field effect transistor formed on a semiconductor layer. The field effect transistor can be used for passing or blocking a radio frequency signal. A signal interconnection wiring is above the field effect transistor in a first direction. A plurality of conductors, which are in electrically insulated from each other and other elements in the device, is between the field effect transistor and the signal interconnection wiring in the first direction. A length, in a second direction, of each floating conductor is less than a width, in the second direction, of a gate of the field effect transistor. Here, the second direction is parallel to the plane of the semiconductor layer and perpendicular to a gate length direction of the field effect transistor.

Abstract: A semiconductor device includes a field effect transistor formed on a semiconductor layer. The field effect transistor can be used for passing or blocking a radio frequency signal. A signal interconnection wiring is above the field effect transistor in a first direction. A plurality of conductors, which are in electrically insulated from each other and other elements in the device, is between the field effect transistor and the signal interconnection wiring in the first direction. A length, in a second direction, of each floating conductor is less than a width, in the second direction, of a gate of the field effect transistor. Here, the second direction is parallel to the plane of the semiconductor layer and perpendicular to a gate length direction of the field effect transistor.

Abstract: A regulator includes a capacitor connected between a ground terminal and an output terminal at which a first voltage is supplied. The first voltage is higher than a power source voltage supplied to the regulator. A feedback circuit in the regulator is configured to output a boost signal corresponding to a comparison between the first voltage and a threshold voltage value. A clock generating circuit includes an oscillator circuit that outputs an oscillation signal and a buffer circuit that outputs a clock signal according to the oscillation signal. The clock signal has an electric current level that is controlled in accordance with the boost signal. A charge pump outputs the first voltage in accordance with the clock signal.

Abstract: A regulator includes a capacitor connected between a ground terminal and an output terminal at which a first voltage is supplied. The first voltage is higher than a power source voltage supplied to the regulator. A feedback circuit in the regulator is configured to output a boost signal corresponding to a comparison between the first voltage and a threshold voltage value. A clock generating circuit includes an oscillator circuit that outputs an oscillation signal and a buffer circuit that outputs a clock signal according to the oscillation signal. The clock signal has an electric current level that is controlled in accordance with the boost signal. A charge pump outputs the first voltage in accordance with the clock signal.

Abstract: A switching circuit comprises a first transistor and a second transistor formed in an active area of semiconductor substrate. The source and drain regions of the transistors are electrically connected to respective source wires and drain wires through a plurality of intermediate metal layers stacked above the transistor. Electrical connections between different layers are made with a plurality of vias. To improve switching performance, the intermediate wires are disposed such that intermediate wires electrically connected to the transistor source regions are not directly beneath the drain wires. Similarly, intermediate wires electrically connected to drain regions are arranged not to be directly underneath source wires.

Abstract: A switching control circuit controls a switching circuit based on decoded signals obtained by decoding several input signals. The switching control circuit is includes a decoder circuit that outputs decoded signals obtained by decoding coded input data signals. The switching control circuit includes a driver circuit that generates control signals for controlling the switching circuit based on the decoded signals. The switching control circuit is provided with a synchronous control circuit that synchronizes the input signals before outputting them for decoding.

Abstract: A semiconductor switch circuit includes first semiconductor switch units and second semiconductor switch units. The first semiconductor switch units each have a first threshold and two first ends. One first end is connected to a common terminal. The second semiconductor switch units each have a second threshold and two second ends. One second end is connected to the other first end of the first semiconductor switch units. The second threshold is lower than the first threshold.

Abstract: A switching control circuit controls a switching circuit based on decoded signals obtained by decoding several input signals. The switching control circuit is includes a decoder circuit that outputs decoded signals obtained by decoding coded input data signals. The switching control circuit includes a driver circuit that generates control signals for controlling the switching circuit based on the decoded signals. The switching control circuit is provided with a synchronous control circuit that synchronizes the input signals before outputting them for decoding.

Abstract: A semiconductor circuit for supplying a signal for controlling a switching circuit includes a control terminal for receiving a control signal. The control signal is sent to a first inverter, which inverts the control signal to generate a first signal. The first signal is provided to a second inverter, which inverts the first signal to generate a second signal. A level shift circuit is configured to receive a first intermediate voltage and a second intermediate voltage and shifts levels of first and second intermediate voltages to generate first and second output voltages, respectively. The output voltages are received by an augmenting circuit, which also receives the first and second signals. The augmenting circuit is configured to augment the output voltages to generate first and second augmented voltages that are output to first and second output terminals, respectively.

Abstract: A switching circuit comprises a first transistor and a second transistor formed in an active area of semiconductor substrate. The source and drain regions of the transistors are electrically connected to respective source wires and drain wires through a plurality of intermediate metal layers stacked above the transistor. Electrical connections between different layers are made with a plurality of vias. To improve switching performance, the intermediate wires are disposed such that intermediate wires electrically connected to the transistor source regions are not directly beneath the drain wires. Similarly, intermediate wires electrically connected to drain regions are arranged not to be directly underneath source wires.

Abstract: According to one embodiment, a semiconductor switch includes a power supply section, a driver, and a switch section. The power supply section is configured to generate a first potential higher than a positive power supply potential, and a negative second potential. The driver is connected to the power supply section and configured to output a control signal. A potential of the control signal is set to the first potential at high level and set to the second potential at low level according to a terminal switching signal. The switch section is configured to receive the control signal and switch a connection between terminals. The driver has a first level shifter, a second level shifter and a first circuit. The first level shifter has a first high-side switch and a first low-side switch. The second level shifter has a second high-side switch and a second low-side switch.