Abstract: A semiconductor device includes: a silicon carbide semiconductor layer of a first conductivity type disposed on a semiconductor substrate; a first impurity region of a second conductivity type located on a surface of the semiconductor layer, the first impurity region surrounding the active region; a plurality of rings of the second conductivity type surrounding the first impurity region; a first insulating film disposed to cover a portion of the first impurity region and the plurality of rings, the first insulating film having a first aperture; a first electrode within the first aperture, the first electrode; a second insulating film disposed to surround the active region, the second insulating film having a higher moisture resistance than the first insulating film; a third insulating film covering a portion of the first electrode and the second insulating film, and a second electrode disposed on the rear face of the semiconductor substrate.

Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.

Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.

Abstract: A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface, barrier regions having a second conductivity type and disposed within the silicon carbide semiconductor layer, an edge termination region having the second conductivity type and disposed within the silicon carbide semiconductor layer, the edge termination region enclosing the barrier regions, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface, wherein each of the barrier regions has a polygonal boundary with the silicon carbide semiconductor layer, and each of sides of the polygonal boundary has an angle of 0° to 5° inclusive relative to <11-20> direction of crystal orientations of the semiconductor substrate.

Abstract: A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface, barrier regions having a second conductivity type and disposed within the silicon carbide semiconductor layer, an edge termination region having the second conductivity type and disposed within the silicon carbide semiconductor layer, the edge termination region enclosing the barrier regions, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface, wherein each of the barrier regions has a polygonal boundary with the silicon carbide semiconductor layer, and each of sides of the polygonal boundary has an angle of 0° to 5° inclusive relative to <11-20> direction of crystal orientations of the semiconductor substrate.

Abstract: A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface of the semiconductor substrate, a guard ring region having a second conductivity type and disposed within the silicon carbide semiconductor layer, a floating region having the second conductivity type and disposed within the silicon carbide semiconductor layer, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface of the semiconductor substrate, wherein the guard ring region and the floating region each include a pair of a high-concentration region having the second conductivity type and a low-concentration region having the second conductivity type.

Abstract: A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration of nitrogen in the first ohmic electrode is higher than or equal to one half of an average concentration of nitrogen in the first impurity region, and an average concentration of a p-type impurity in a portion of the first ohmic electrode except a portion of the first ohmic electrode within 50 nm from an interface between the first ohmic electrode and the first impurity region is equal to or lower than 3.0×1018 cm?3.

Abstract: A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration of nitrogen in the first ohmic electrode is higher than or equal to one half of an average concentration of nitrogen in the first impurity region, and an average concentration of a p-type impurity in a portion of the first ohmic electrode except a portion of the first ohmic electrode within 50 nm from an interface between the first ohmic electrode and the first impurity region is equal to or lower than 3.0×1018 cm?3.