Abstract: A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

Abstract: The invention provides a railway car body that causes less noise and that can be manufactured easily. The railway car comprises a subframe 40 disposed below a floor of the car body with a clearance therebetween, and a bogie 30 disposed below the subframe 40 with a clearance therebetween, wherein car body 10 and subframe 40 are connected via a center pin 50 protruding downward from car body 10, and subframe 40 and bogie 30 are connected via a second center pin 70 protruding upward from the bogie. The lower end of the second center pin 70 is connected to the bogie 30 via a coupling link 110.

Abstract: A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

Abstract: Plasma treatment apparatus and method in which an influence on the treatment characteristics of reaction products in plasma treatment such as etching is offset, thereby enabling uniform treatment characteristics to be obtained in the plane of a substrate are provided. In a plasma treatment method of treating a substrate to be processed by using a gas plasma via a mask in a treatment chamber, plasma treatment is performed while optimizing an amount of deposition of a side wall protection layer, equalizing the optimized deposition amount in the center of the substrate and that in a peripheral part, and maintaining the uniformity in the plane of the side wall protection layer.

Abstract: Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.

Abstract: The present invention consists in that a nitrogen gas line and a liquid nitrogen line are subjected to hot-blast baking with clean nitrogen gas and a gas containing oxygen, whereby outgasses such as moisture to develop from heat exchangers, valves and piping can be excluded. Moreover, in order to obtain nitrogen gas of very high purity, liquid nitrogen of low contents of high-boiling components as subjected to rectifying separation is derived and gasified, and the liquid nitrogen is introduced into co-adsorbers so as to absorb and remove carbon monoxide difficult of separation by the rectifying separation, whereupon the liquid nitrogen and the nitrogen gas are obtained as products.

Abstract: The invention discloses a method of gas separation which pressurizes part of a raw gas issuing from the outlet of an adsorbing tower by employing a compressor portion of an expander compressor, cools the pressurized gas by means of a main heat exchanger, and expands the cooled gas by means of an expansion turbine of the expander compressor, thereby efficiently carrying out gas separation with a simple arrangement.

Abstract: Nitrogen having purity of 99.9999% or more can be produced continuously by contacting a starting gas mixture comprising 90% by volume or more of nitrogen and 10% by volume or less of oxygen with A-type zeolite package in an adsorption column at an adsorption temperature of -100.degree. to -196.degree. C. to remove oxygen from the starting gas mixture and regenerating A-type zeolite by heating it at a temperature higher than the adsorption temperature.

Abstract: A method of separating gases which includes: a step which introduces into a separating cell a mixture gas that contains paramagnetic gases and nonparamagnetic gases, and which separates the paramagnetic gases and the nonparamagnetic gases from the mixture gas via a permeable membrane in the separating cell; and a step which applies a magnetic field to a gas stream of the mixture gas nearly at right angles therewith to form a high gradient magnetic field region, so that the paramagnetic gases and the nonparamagnetic gases are separated from the mixture gas by the high gradient magnetic field.