Abstract: An information logger records rotation information on a spinning top and outputs the recorded information. A detachment detector detects that the spinning top is attached to the launcher. A rotation-rate detecting unit detects a rotation rate of the spinning top while a rotational force is applied to the spinning top. Rotation information of the spinning top derived from a result detected by a rotation-rate detecting unit is stored in a storage unit. The rotation information stored in the storage unit is sent to an information processor by a communication unit as required.

Abstract: A spinning top toy including a body and a separate shaft portion. The body has a first hook and the shaft portion has a second hook. The body and the shaft portion are switchable between couplable and decouplable states depending on a relative rotational position. The first hook and the second hook are vertically aligned in the couplable state, and are vertically misaligned in the decouplable state. An urging unit brings an upper face of the first hook and a bottom face of the second hook into contact by an urging force of a spring in the couplable state. The body and the shaft portion enter the couplable state by turning and pushing. The body and the shaft portion engage each other by bringing the upper face of the first hook into contact with the bottom face of the second hook by the urging force of the spring.

Abstract: A rotation-rate detector detects a rotation rate of a spinning top and is fixed to or detachably attached to a launcher. The launcher applies a rotational force to the spinning top to launch the spinning top. The rotation-rate detector includes a detachment detector that detects detachment and attachment of the spinning top. The rotation rate of the spinning top is detected after the detachment detector detects attachment of the spinning top.

Abstract: There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays.

Abstract: Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 ?m. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 ??cm or less.

Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Abstract: There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays.

Abstract: Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 ?m. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 ??cm or less.

Abstract: There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays.

Abstract: Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at % or more.

Abstract: A spinner for a toy top enables a launching position of a toy top to be easily set and held in place even when a rack belt is vigorously pulled out. The spinner includes an elongated rack belt having a rack gear, and a spinner main body formed with an insertion hole through which the rack belt is inserted. The spinner main body includes a toy top mounting part rotatably provided on one surface thereof. Inside the spinner main body, a rotating mechanism that is actuated by pulling out the rack belt to impart a rotational force to the toy top mounting part is provided. The rack belt can be inserted into and pulled out from the insertion hole in a same direction as an axis of rotation of the toy top mounting part.

Abstract: There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays.

Abstract: A production method of an electroless plating material of the present invention is a method for the production of an electroless plating material that has a surface to be plated by electroless plating, and includes an ozone treatment step in which a material body that is made of a resin is brought into contact with a solution that contains ozone to form a modified layer in a surface of the material body, and a superficial layer removal step in which, after the ozone treatment step, the surface of the material body is irradiated with ultraviolet rays to remove a superficial layer of the modified layer.

Abstract: A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.

Abstract: Provided is an interconnection structure that, in a display device such as an organic EL display or a liquid crystal display, has superior workability during wet etching even without providing an etch stop layer. The interconnection structure has, in the given order, a substrate, a semiconductor layer of a thin film transistor, and a metal interconnection film, and has a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer comprises an oxide semiconductor, the barrier layer has a layered structure of a high-melting-point metal thin film and a Si thin film, and the Si thin film is directly connected to the semiconductor layer.

Abstract: An interconnection structure includes a semiconductor layer of a thin-film transistor and a metal interconnection film above a substrate in this order from a side of the substrate, and includes a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer is composed of an oxide semiconductor. The barrier layer is composed of a Ti oxide film containing TiOx (where x is from 1.0 to 2.0), and the Ti oxide film is directly connected to the semiconductor layer. The oxide semiconductor is composed of an oxide containing at least one element selected from the group consisting of In, Ga, Zn and Sn.

Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

Abstract: Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.

Abstract: A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.

Abstract: Disclosed is an interconnection structure which, in a display device such as an organic EL display and a liquid crystal display, is capable of stably connecting a semiconductor layer directly to an Al-base film constituting, for example, a source electrode or a drain electrode; and which hardly causes galvanic corrosion between the semiconductor layer and the Al-base film in an electrolyte solution to be used in a wet process and is able to suppress stripping of the Al-base film. It is an interconnection structure including a semiconductor layer of a thin-film transistor and an Al alloy film connected directly to the semiconductor layer above a substrate in this order from the side of the substrate, wherein the semiconductor layer is composed of an oxide semiconductor, and the Al alloy film contains at least one of Ni and Co.