Abstract: A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra?21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR?, —OC(?O)R?, a hydroxyalkyl group, or a cyano group; R? represents a hydrogen atom or an alkyl group; and n? represents an integer of from 0 to 2.

Abstract: A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra?21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR?, —OC(?O)R?, a hydroxyalkyl group, or a cyano group; R? represents a hydrogen atom or an alkyl group; and n? represents an integer of from 0 to 2.