Patents by Inventor Takefumi Itou

Takefumi Itou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrolyte tank and manufacturing method thereof
    Patent number: 6761945
    Abstract: An electrolyte tank which allows effective use of existing space of various shapes is provided. An electrolyte tank is formed by laminating one or more layers of coated fabric provided by coating a woven fabric of organic fiber with rubber or plastic and processing the laminated coated fabric to a bag-shape.
    Type: Grant
    Filed: October 14, 1999
    Date of Patent: July 13, 2004
    Assignees: Sumitomo Electric Industries, Ltd., Kansai Electric Power Co., Ltd.
    Inventors: Toshihisa Adachi, Takefumi Itou, Toshihiko Takiguchi, Nobuyuki Tokuda
  • Copper Ni-Si-P alloy for an electronic device
    Patent number: 5248351
    Abstract: A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities.The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: September 28, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenji Kubozono, Takashi Nakagima, Takefumi Itou, Kimio Hashizume, Shinichi Iwase
  • Process for producing copper alloy
    Patent number: 5064611
    Abstract: An improved method for producing a copper alloy, wherein a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, and a remainder of Cu and unavoidable impurities (or a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, 0.03 to 0.5% by weight of Zn, and a remainder of Cu and unavoidable impurities) is quenched to solidify, at a cooling rate in the range from 10.sup.2 .degree. C./sec. to 10.sup.5 .degree. C./sec., and continuously cooling in succession said solidified metal to a normal temperature, to cause an intermetallic compound of Ni-P and Ni-Si to be finely and uniformly dispersed into the matrix material.
    Type: Grant
    Filed: January 17, 1991
    Date of Patent: November 12, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kimio Hashizume, Keizo Kitakaze, Takefumi Itou
  • Copper alloy for an electronic device and method of preparing the same
    Patent number: 4950451
    Abstract: A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg.A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750.degree. C.-950.degree. C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350.degree. C.-500.degree. C., or slowly cooling it at a rate of 4.degree. C./min. or less, or cooling it at a rate of 1.degree. C./min. or more until temperature reaches 500.degree. C. and keeping its temperature for at least one hour in a temperature range of 500.degree. C.-350.degree. C.
    Type: Grant
    Filed: March 21, 1989
    Date of Patent: August 21, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takashi Nakajima, Kenji Kubozono, Takefumi Itou, Kimio Hashizume, Shinichi Iwase