Abstract: Conventionally, a method in which pieces of point group information for use in position matching between a white line position detected by an object detection sensor and a white line position on a map are extracted from the white line positions according to a travel environment, has not been taken into account. In the present disclosure, a point group extraction condition is changed according to change in the travel environment so that: a process of position matching that exhibits robustness with respect to change in the travel environment can be realized; and an own position and a white line position existing at a long distance from an own vehicle can be detected with high accuracy.

Abstract: Host vehicle position measuring accuracy can be improved even in a situation where a position of a feature present around the host vehicle cannot be detected on the basis of sensor information from an in-vehicle sensor. A host vehicle position measuring device is configured to include: a host vehicle position measuring unit that measures a position of a host vehicle using a satellite signal emitted from a satellite positioning system; and a position correcting unit that estimates, using an error estimating model for estimating a position measuring error in the host vehicle position measuring unit, a measuring error corresponding to the position of the host vehicle measured by the host vehicle position measuring unit, and corrects the position of the host vehicle measured by the host vehicle position measuring unit using the measuring error.

Abstract: A solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements PD1 and PD2. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.

Abstract: Provided is a solid-state imaging element that effectively reduces 1/f noise from a signal output from a source-follower transistor. The solid-state imaging element includes a first conductivity type substrate 10, a photodiode in which carriers are accumulated in a second conductivity type accumulation region, the second conductivity type being different from the first conductivity type, a source-follower transistor 15 which has a gate electrode 151 electrically connected to a floating diffusion region accumulated with the carriers read out from the photodiode and which is provided with a second conductivity type buried channel, and an element separator 21 which is provided around an active region of the photodiode and the source-follower transistor 15. The buried channel of the source-follower transistor 15 is formed away from a sidewall of the element separator 21.

Abstract: A solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements PD1 and PD2. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.

Abstract: The solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements PD1 and PD2. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements. The gate electrode 107 is configured with a polysilicon gate layer 107a and a reflection film consisting of a high melting point metal silicide layer 107b for covering the surface of the polysilicon gate layer 107a. As a result, the improvement of sensitivity is achieved for the solid-state imaging apparatus.

Abstract: A solid-state image capturing element includes, disposed in a surface portion from an upper part of the photodiode region to the electric charge detecting section: a second conductivity type first region; a second conductivity type second region; and a second conductivity type third region, one end of which is adjacent to the second conductivity type second region and the other end of which is adjacent to the electric charge detecting section, where each impurity concentration of the first, second and third regions is set in a manner to form an electric field being directed from the second conductivity type first region through the second conductivity type second region to the second conductivity type third region.

Abstract: A solid-state image capturing element according to the present invention includes, disposed in a surface portion from an upper part of the photodiode region to the electric charge detecting section: a second conductivity type first region; a second conductivity type second region; and a second conductivity type third region, one end of which is adjacent to the second conductivity type second region and the other end of which is adjacent to the electric charge detecting section, where each impurity concentration of the first, second and third regions is set in a manner to form an electric field being directed from the second conductivity type first region through the second conductivity type second region to the second conductivity type third region.

Abstract: A solid-state image capturing apparatus is provided, where each of the pixels comprises a pixel light receiving section for converting incident light into a signal charge by photoelectric conversion, a charge storing section for storing the signal charge and generating a signal voltage in accordance with the stored signal charge, and an amplifying transistor for amplifying and outputting the signal voltage. A second-conductivity type semiconductor region, in which the amplifying transistor is formed, on the semiconductor substrate has an impurity concentration profile different from an impurity concentration profile of a different second-conductivity type semiconductor region, in which a peripheral circuit transistor that constitutes the peripheral circuit is formed.

Abstract: A solid-state image capturing apparatus is provided, where each of the pixels comprises a pixel light receiving section for converting incident light into a signal charge by photoelectric conversion, a charge storing section for storing the signal charge and generating a signal voltage in accordance with the stored signal charge, and an amplifying transistor for amplifying and outputting the signal voltage. A second-conductivity type semiconductor region, in which the amplifying transistor is formed, on the semiconductor substrate has an impurity concentration profile different from an impurity concentration profile of a different second-conductivity type semiconductor region, in which a peripheral circuit transistor that constitutes the peripheral circuit is formed.

Abstract: A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.

Abstract: A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.