Abstract: The present invention provides a shift control method implemented in a vehicle equipped with an automatic transmission for controlling an input shaft rotation speed to a target input shaft rotation speed during a shift. The method includes setting of a basic target synchronization rotation speed that is a basic target value of the input shaft rotation speed during the shift, and setting of a corrected target input shaft rotation speed as the target input shaft rotation speed when the shift is a downshift without a requirement for a driving force of the vehicle, The corrected target input shaft rotation speed is obtained by decreasingly correcting the basic target synchronization rotation speed. Further, a decreasing correction amount of the basic target synchronization rotation speed is set so as to become larger as a deceleration of the vehicle becomes larger.

Abstract: The present invention provides a shift control method implemented in a vehicle equipped with an automatic transmission for controlling an input shaft rotation speed to a target input shaft rotation speed during a shift. The method includes setting of a basic target synchronization rotation speed that is a basic target value of the input shaft rotation speed during the shift, and setting of a corrected target input shaft rotation speed as the target input shaft rotation speed when the shift is a downshift without a requirement for a driving force of the vehicle, The corrected target input shaft rotation speed is obtained by decreasingly correcting the basic target synchronization rotation speed. Further, a decreasing correction amount of the basic target synchronization rotation speed is set so as to become larger as a deceleration of the vehicle becomes larger.

Abstract: The present invention provides a shift control method include: setting a basic target synchronization rotation speed that is a basic target value of the input shaft rotation speed during the shift; determining whether or not an accelerating intention is present when the shift is a downshift with a driving force requirement to the vehicle; when the accelerating intention is present, setting a first target input shaft rotation speed as the target input shaft rotation speed, the first target input shaft rotation speed being obtained by increasingly correcting the basic target synchronization rotation speed; and when the accelerating intention is not present, setting a second target input shaft rotation speed as the target input shaft rotation speed, the second target input shaft rotation speed being obtained by maintaining or decreasingly correcting the basic target synchronization rotation speed.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: In a specific state where an electric vehicle is in a stop state and a creep torque is generate in an electric motor (2), when a shift range is switched from a traveling range to a non-traveling range, a motor control section (10B) performs a torque decrease control to stepwisely decrease the creep torque of the electric motor (2), and an automatic transmission control device (30) performs a disengagement control to gradually disengage the frictional engagement element of the automatic transmission (3).

Abstract: A method of forming field effect transistor (FET) circuits, and forming Integrated Circuit (IC) chips with the FET circuits. After forming gate sidewall spacers, filling with insulation and planarizing to the top of the sidewall spacers, self-aligned source/drain contacts are etched through the insulation and said gate dielectric layer to source/drain regions. A combination fluoroether/hydrofluoroether-hydrofluorocarbon (*FE-HFC) plasma etch etches the source/drain contacts self-aligned. The self-aligned contacts are filled with conductive material, and FETs are wired together into circuits, connecting to FETs through the self-aligned contacts.

Abstract: A method of forming field effect transistor (FET) circuits, and forming Integrated Circuit (IC) chips with the FET circuits. After forming gate sidewall spacers, filling with insulation and planarizing to the top of the sidewall spacers, self-aligned source/drain contacts are etched through the insulation and said gate dielectric layer to source/drain regions. A combination fluoroether/hydrofluoroether-hydrofluorocarbon (*FE-HFC) plasma etch etches the source/drain contacts self-aligned. The self-aligned contacts are filled with conductive material, and FETs are wired together into circuits, connecting to FETs through the self-aligned contacts.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: In a specific state where an electric vehicle is in a stop state and a creep torque is generate in an electric motor (2), when a shift range is switched from a traveling range to a non-traveling range, a motor control section (10B) performs a torque decrease control to stepwisely decrease the creep torque of the electric motor (2), and an automatic transmission control device (30) performs a disengagement control to gradually disengage the frictional engagement element of the automatic transmission (3).

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.

Abstract: Provided is a technique which can, in order to guarantee the molding accuracy of hot press molding, accurately measure the temperature of a workpiece being subjected to the hot press molding. A hot press mold is a mold used for hot press molding for hardening and molding a workpiece, which has been heated, by pressing the workpiece. The hot press mold is provided with a stroke type temperature measuring device which is extended and retracted by a pressing force applied thereto through the workpiece. The temperature measuring device is provided in such a manner that the temperature measuring device protrudes outward from the molding surface of the mold, and when subjected to the pressing force applied through the workpiece while being in contact with the workpiece, the temperature measuring device shortens in length and retracts into the mold.

Abstract: The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.

Abstract: A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.

Abstract: An unsaturated hydrogen-containing fluoroolefin compound is obtained by bringing an unsaturated fluorine-containing halogen compound into contact with 0.1 to 3 molar equivalents of hydrogen relative to the unsaturated fluorine-containing halogen compound in a vapor phase in the presence of a supported palladium catalyst in which an amount of supported palladium is 0.1% by weight to 2.5% by weight.

Abstract: Provided is a technique which can, in order to guarantee the molding accuracy of hot press molding, accurately measure the temperature of a workpiece being subjected to the hot press molding. A hot press mold is a mold used for hot press molding for hardening and molding a workpiece, which has been heated, by pressing the workpiece. The hot press mold is provided with a stroke type temperature measuring device which is extended and retracted by a pressing force applied thereto through the workpiece. The temperature measuring device is provided in such a manner that the temperature measuring device protrudes outward from the molding surface of the mold, and when subjected to the pressing force applied through the workpiece while being in contact with the workpiece, the temperature measuring device shortens in length and retracts into the mold.

Abstract: A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): CxHyFz, wherein x is 3, 4, or 5, and y and z are individually positive integers, provided that y>z is satisfied. When etching a silicon nitride film that covers a silicon oxide film formed on the etching target, the silicon nitride film can be selectivity etched as compared with the silicon oxide film by utilizing the process gas including the specific fluorohydrocarbon under the plasma conditions.