Abstract: An electromechanical transducer includes a plurality cells that are electrically connected to form a unit. Each of the cells includes a first electrode and a second electrode provided with a gap being disposed therebetween. Dummy cells that are not electrically connected to the cells are provided around the outer periphery of the unit of the cells.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Abstract: A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

Abstract: An electromechanical transducer includes a plurality cells that are electrically connected to form a unit. Each of the cells includes a first electrode and a second electrode provided with a gap being disposed therebetween. Dummy cells that are not electrically connected to the cells are provided around the outer periphery of the unit of the cells.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Abstract: A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

Abstract: To provide new image forming apparatus and a printing method that can obtain information on image forming by using terahertz waves. An image forming apparatus includes a stock unit for stocking a media stack made of a plurality of media with images formed on; an electromagnetic wave generation unit for generating a terahertz wave to radiate on the media stack; an electromagnetic wave detection unit for detecting the terahertz wave propagated in a laminating direction of the media stack; a memory unit for storing reference data; a processing unit for generating data related to an image forming state from the detection signal from the electromagnetic wave detection unit, information on the number of sheets of the medium, and information on the image formed on the medium; and a comparative unit for comparing the data generated by the processing unit and the reference data stored in the memory unit.

Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Abstract: An electromechanical transducer includes a plurality cells that are electrically connected to form a unit. Each of the cells includes a first electrode and a second electrode provided with a gap being disposed therebetween. Dummy cells that are not electrically connected to the cells are provided around the outer periphery of the unit of the cells.

Abstract: To provide a sheet material identifying apparatus for identifying the kind of a sheet material, including an adjusting assembly for dehumidifying or humidifying a predetermined region of the sheet material and adjusting the moisture content of the predetermined region, external force applying means for applying an external force to the predetermined region of the sheet material whose moisture content is adjusted and detecting means for detecting an external force propagated through the sheet while the external force is applied by the external force applying means; wherein an external force is applied to the predetermined region whose moisture content is adjusted through the adjusting assembly by the external force applying means and the kind of a sheet material is identified in accordance with the external force propagated through the sheet detected by the detecting means.

Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Abstract: A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

Abstract: A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

Abstract: Information (particularly, water content) of a sheet material which changes during progression of processing is estimated with higher accuracy and information output or (image formation) processing is performed. The water content estimation method of the present invention includes: detecting a first information regarding moisture contained in a sheet material; detecting a second information regarding a factor affecting information regarding the moisture contained in the sheet material; predicatively computing an estimation of a water content of the sheet material based on the first information and the second information; and adjusting processing conditions for image formation based on the estimation of the water content which is computed.

Abstract: A multi-functional sensor for deriving information on a recording sheet material comprising an impact-applying unit for applying an external mechanical force onto the recording sheet material, a signal-detecting unit for detecting a signal of response of the recording sheet material to the external mechanical force, a signal-processing unit for processing the signal, and a signal-judging unit for deriving a property of the recording sheet material by comparison of a signal from the signal-detecting unit or the signal processing unit with information memorized preliminarily, wherein the signal-processing unit comprises a separation section for separating the signal from the signal-detecting unit into output signals on the properties of the recording sheet material, and a processing section for deriving, by statistical treatment, a correlation equation showing a correlation between the separated output signal and the properties of the recording sheet material.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.