Abstract: An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

Abstract: A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.

Abstract: The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

Abstract: A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.

Abstract: The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

Abstract: An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.

Abstract: A method for producing an etching or cleaning solution comprising (1) at least one member selected from the group consisting of fluoride salts and bifluoride salts formed from at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums and aromatic quaternary ammoniums with hydrofluoric acid; (2) at least one heteroatom-containing organic solvent; and (3) water, the method comprising the steps of: Step 1: mixing an aqueous hydrofluoric acid solution with at least one heteroatom-containing organic solvent, and Step 2: mixing the mixture obtained in Step 1 with at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums, aromatic quaternary ammoniums, and fluorides thereof.

Abstract: The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

Abstract: An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 ?/min or less at 25° C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.

Abstract: The present invention relates to a removing solution for removing ashing residue formed by dry etching and/or ashing on a Cu/low-k multilevel interconnection structure, wherein the removing solution comprises 0.007 to 0.04 mol/kg of acid, a nonmetallic fluoride salt whose concentration is at least 20 times as great as that of the acid, and water.

Abstract: An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 10O ?/min or less at 25° C., and an etching rate ratio:etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.

Abstract: A cleaning composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a residual polymer derived from a resist using the composition; and a method of cleaning after CMP using the composition.

Abstract: A cleaning composition comprising (1) at least one fluoride and/or hydrogendifluoride salt formed from at least one member selected from the group consisting of hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammonium salts and aromatic quaternary ammonium salts with hydrofluoric acid; (2) at least one organic solvent that includes one or more heteroatoms; and (3) water.

Abstract: A cleaning composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a residual polymer derived from a resist using the composition; and a method of cleaning after CMP using the composition.

Abstract: A cleaning composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a residual polymer derived from a resist using the composition; and a method of cleaning after CMP using the composition.

Abstract: The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.

Abstract: The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.

Abstract: A cleaning agent characterized in that the agent comprises 0.1 to 4 wt. % of hydrofluoric acid, a surfactant of the following formula (1) in a concentration of 50 to 1500 ppm or a surfactant of the following formula (2) or (3) in a concentration of 50 to 100000 ppm, and the balance water, and a cleaning method of the surfaces of silicon wafers and the like using the agentRfCOONH.sub.4 (1)wherein Rf is a fluorine-containing hydrocarbon group having 5 to 9 carbon atomsRf'O(CH.sub.2 CH.sub.2 O)nR (2)Rf'(CH.sub.2 CH.sub.2 O)nR (3)wherein Rf' is a fluorine-containing hydrocarbon group having 5 to 15 carbon atoms, R is hydrogen or alkyl having 1 to 4 carbon atoms, and n is 5 to 20.