Abstract: In the process of producing a porous body containing a fibrous apatite/collagen composite by gelating a dispersion comprising the fibrous apatite/collagen composite, collagen and water, freeze-drying the resultant gel to form a porous body, and cross-linking collagen in the porous body, a method for controlling the average pore diameter of the porous body by the solidification time of the gel in the freezing step.

Abstract: A method for producing a porous body comprising apatite/collagen composite fibers comprising the steps of gelling a dispersion comprising long apatite/collagen composite fibers having an average length of 10-75 mm, short apatite/collagen composite fibers having an average length of 0.05-1 mm, and a liquid; freezing and drying the resultant gel to form a porous body; and cross-linking collagen in the porous body.

Abstract: An object of the present invention is to provide surgical instruments which can insert a block-shaped interspinous spacer into a space between adjacent spinous processes with easier operations. The surgical instruments of the present invention are instruments for inserting the interspinous spacer having a block-like shape formed with a hollow portion into the space between the adjacent spinous processes. The surgical instruments include an insertion instrument having an inserting portion adapted to be passed through the hollow portion of the interspinous spacer, and a grasping instrument for grasping the insertion instrument, wherein the insertion instrument and the grasping instrument are adapted to be used under the condition that the insertion instrument is inserted into the hollow portion of the interspinous spacer and in such a state the grasped portion of the insertion instrument which is provided near the first end of the insertion instrument is grasped by the grasping instrument.

Abstract: A method for producing a porous body comprising apatite/collagen composite fibers comprising the steps of gelling a dispersion comprising long apatite/collagen composite fibers having an average length of 10-75 mm, short apatite/collagen composite fibers having an average length of 0.05-1 mm, and a liquid; freezing and drying the resultant gel to form a porous body; and cross-linking collagen in the porous body.

Abstract: An organ regeneration device adapted to be used by placing it into a defective portion of an organ to regenerate the organ is provided. The organ regeneration device has a base body having a shape corresponding to a shape of the defective portion of the organ. The organ regeneration device also has particles carried on the base body, wherein the particles are composed of a different material from that of the base body. The organ regeneration device also has a growth-related substance contained in the organ regeneration device for growth and differentiation of cells around the defective portion. The growth-related substance contains an angiogenesis factor. Further, the growth-related substance contains nucleic acid containing a base sequence coding for amino-acid sequence of a growth factor different from the angiogenesis factor. Furthermore, the nucleic acid is introduced into a host cell.

Abstract: In the process of producing a porous body containing a fibrous apatite/collagen composite by gelating a dispersion comprising said fibrous apatite/collagen composite, collagen and water, freeze-drying the resultant gel to form a porous body, and cross-linking collagen in said porous body, a method for controlling the average pore diameter of said porous body by the solidification time of said gel in said freezing step.

Abstract: To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition. The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.

Abstract: A polishing composition contains silica abrasive grains and an iodine compound. The silica abrasive grains exhibit a negative zeta potential in the polishing composition. The silica abrasive grains have an average primary particle size of 30 nm or smaller, and the polishing composition has a pH of 4 or lower. The polishing composition is suitable for polishing a polysilicon film and a silicon nitride film.

Abstract: An object of the present invention is to provide an interspinous spacer which can be reliably held between adjacent spinous processes to maintain an appropriate space between the adjacent spinous processes, and in particular to provide an interspinous spacer which allows a less invasive operation to be carried out without extensive resection of bone or soft tissue. The interspinous spacer 1 is adapted to be used by inserting it into a space between a spinous process 101 and a spinous process 102, and it is formed from a block body having a recess 21 for receiving a part of each of the spinous processes in a state that the block body is inserted into the space between the spinous processes 101 and 102. The recess 21 is formed in the peripheral surface of the block body 2. The recess 21 has an arc-shaped bottom. The depth of the recess 21 is in the range of 0.5 to 10 mm, and the width of the recess is in the range of 1 to 15 mm. Further, the block body 2 is formed into a substantially cylindrical shape.

Abstract: An object of the present invention is to provide surgical instruments which can insert a block-shaped interspinous spacer into a space between adjacent spinous processes with easier operations. The surgical instruments of the present invention are instruments for inserting the interspinous spacer having a block-like shape formed with a hollow portion into the space between the adjacent spinous processes. The surgical instruments include an insertion instrument having an inserting portion adapted to be passed through the hollow portion of the interspinous spacer, and a grasping instrument for grasping the insertion instrument, wherein the insertion instrument and the grasping instrument are adapted to be used under the condition that the insertion instrument is inserted into the hollow portion of the interspinous spacer and in such a state the grasped portion of the insertion instrument which is provided near the first end of the insertion instrument is grasped by the grasping instrument.

Abstract: A porous composite comprising a porous layer containing a calcium phosphate ceramic, and a dense layer formed on part of the porous layer and having a smaller average pore size than that of the porous layer. The porous composite can be produced by (1) introducing a slurry containing a calcium phosphate ceramic/collagen composite and collagen into a molding die having a high thermal conductivity, (2) rapidly freezing and drying the slurry in the molding die, to form a porous body comprising a porous layer and a dense layer formed on the porous layer, (3) cross-linking collagen in the porous body, and (4) removing the dense layer except for a portion thereof on a surface coming into contact with a soft tissue when implanted in a human body, so that the porous layer is exposed.

Abstract: A semiconductor device comprises: a signal of high voltage not less than the power voltage; a first transistor for transmitting the high voltage signal; a second transistor for electrically charging and discharging the gate potential of the first transistor; and a circuit for generating a pulse signal of which "H" level is a voltage higher than the power voltage by the threshold voltage of the second transistor. The pulse signal generating circuit is connected to the gate electrode of the second transistor. This cancels the drop of a voltage corresponding to the threshold voltage generated at the time when the electric charge is transferred to the gate electrode of the first transistor. Accordingly, even though the power voltage is low, a high voltage signal can be transferred through the first transistor and the word line potential can be boosted to a voltage not less than the power voltage.