Patents by Inventor Takehiko Senoo
Takehiko Senoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482455Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, cutting the workpiece along an intended cut line. In the cutting the workpiece, a dry etching process is performed from a front surface toward a rear surface of the workpiece while the workpiece is fixed on a support member at least under its own weight or by suction, to form a groove from the front surface to reach the rear surface of the workpiece.Type: GrantFiled: July 18, 2018Date of Patent: October 25, 2022Assignees: IWATANI CORPORATION, HAMAMATSU PHOTONICS K.K.Inventors: Toshiki Manabe, Takehiko Senoo, Koichi Izumi, Tadashi Shojo, Takafumi Ogiwara, Takeshi Sakamoto
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Patent number: 11380586Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.Type: GrantFiled: July 18, 2018Date of Patent: July 5, 2022Assignees: IWATANI CORPORATION, HAMAMATSU PHOTONICS K.K.Inventors: Toshiki Manabe, Takehiko Senoo, Koichi Izumi, Tadashi Shojo, Takafumi Ogiwara, Takeshi Sakamoto
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Publication number: 20220143655Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.Type: ApplicationFiled: January 26, 2022Publication date: May 12, 2022Inventors: Kazuya DOBASHI, Takehiko ORII, Yukimasa SAITO, Kunihiko KOIKE, Takehiko SENOO, Koichi IZUMI, Yu YOSHINO, Tadashi SHOJO, Keita KANEHIRA
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Patent number: 11267021Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.Type: GrantFiled: February 9, 2018Date of Patent: March 8, 2022Assignees: TOKYO ELECTRON LIMITED, IWATANI CORPORATIONInventors: Kazuya Dobashi, Takehiko Orii, Yukimasa Saito, Kunihiko Koike, Takehiko Senoo, Koichi Izumi, Yu Yoshino, Tadashi Shojo, Keita Kanehira
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Publication number: 20210107041Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.Type: ApplicationFiled: February 9, 2018Publication date: April 15, 2021Inventors: Kazuya DOBASHI, Takehiko ORII, Yukimasa SAITO, Kunihiko KOIKE, Takehiko SENOO, Koichi IZUMI, Yu YOSHINO, Tadashi SHOJO, Keita KANEHIRA
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Publication number: 20200365460Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.Type: ApplicationFiled: July 18, 2018Publication date: November 19, 2020Applicants: Iwatani Corporation, Hamamatsu Photonics K.K.Inventors: Toshiki MANABE, Takehiko SENOO, Koichi IZUMI, Tadashi SHOJO, Takafumi OGIWARA, Takeshi SAKAMOTO
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Publication number: 20200365461Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, cutting the workpiece along an intended cut line. In the cutting the workpiece, a dry etching process is performed from a front surface toward a rear surface of the workpiece while the workpiece is fixed on a support member at least under its own weight or by suction, to form a groove from the front surface to reach the rear surface of the workpiece.Type: ApplicationFiled: July 18, 2018Publication date: November 19, 2020Applicants: IWATANI CORPORATION, HAMAMATSU PHOTONICS K.K.Inventors: Toshiki MANABE, Takehiko SENOO, Koichi IZUMI, Tadashi SHOJO, Takafumi OGIWARA, Takeshi SAKAMOTO
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Patent number: 9533268Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.Type: GrantFiled: October 10, 2014Date of Patent: January 3, 2017Assignees: IWATANI CORPORATION, CENTRAL GLASS COMPANY, LIMITEDInventors: Kunihiko Koike, Yu Yoshino, Naohisa Makihira, Takehiko Senoo, Toshihiro Aida, Tomoya Biro, Hiroshi Ichimaru, Masahiro Tainaka
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Patent number: 9214364Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.Type: GrantFiled: March 26, 2012Date of Patent: December 15, 2015Assignees: TOKYO ELECTRON LIMITED, IWATANI CORPORATIONInventors: Kazuya Dobashi, Kensuke Inai, Akitaka Shimizu, Kenta Yasuda, Yu Yoshino, Toshihiro Aida, Takehiko Senoo
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Patent number: 9159622Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.Type: GrantFiled: August 7, 2014Date of Patent: October 13, 2015Assignee: Disco CorporationInventors: Sakae Matsuzaki, Takatoshi Masuda, Nozomi Maemoto, Yu Yoshino, Takehiko Senoo, Toshihiro Aida, Tomoya Biro
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Publication number: 20150044857Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.Type: ApplicationFiled: August 7, 2014Publication date: February 12, 2015Inventors: Sakae Matsuzaki, Takatoshi Masuda, Nozomi Maemoto, Yu Yoshino, Takehiko Senoo, Toshihiro Aida, Tomoya Biro
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Publication number: 20150020890Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.Type: ApplicationFiled: October 10, 2014Publication date: January 22, 2015Inventors: Kunihiko KOIKE, Yu YOSHINO, Naohisa MAKIHIRA, Takehiko SENOO, Toshihiro AIDA, Tomoya BIRO, Hiroshi ICHIMARU, Masahiro TAINAKA
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Publication number: 20140061031Abstract: A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.Type: ApplicationFiled: February 27, 2013Publication date: March 6, 2014Applicants: Kyoto University, Iwatani CorporationInventors: Yu YOSHINO, Kunihiko KOIKE, Takehiko SENOO, Jiro MATSUO, Toshio SEKI
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Patent number: 8461051Abstract: A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.Type: GrantFiled: August 10, 2009Date of Patent: June 11, 2013Assignees: Iwatani Corporation, Kyoto UniversityInventors: Kunihiko Koike, Takehiko Senoo, Yu Yoshino, Shuhei Azuma, Jiro Matsuo, Toshio Seki, Satoshi Ninomiya
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Publication number: 20120247670Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.Type: ApplicationFiled: March 26, 2012Publication date: October 4, 2012Applicants: IWATANI CORPORATION, TOKYO ELECTRON LIMITEDInventors: Kazuya DOBASHI, Kensuke INAI, Akitaka SHIMIZU, Kenta YASUDA, Yu YOSHINO, Toshihiro AIDA, Takehiko SENOO
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Publication number: 20120071003Abstract: Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.Type: ApplicationFiled: September 15, 2011Publication date: March 22, 2012Inventors: Kazuya Dobashi, Takashi Fuse, Satohiko Hoshino, Takehiko Senoo, Yu Yoshino
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Publication number: 20110147896Abstract: A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.Type: ApplicationFiled: August 10, 2009Publication date: June 23, 2011Applicants: Iwatani Corporation, kyoto UniversityInventors: Kunihiko Koike, Takehiko Senoo, Yu Yoshino, Shuhei Azuma, Jiro Matsuo, Toshio Seki, Satoshi Ninomiya
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Patent number: 5759334Abstract: The plasma processing apparatus of the present invention increases the throughput of plasma processing. This objective is achieved by a composition which comprises a processing chamber (10) for performing surface processing of substrates (W) by means of a plasma discharge, load-lock chambers (20R) and (20L) whereto passage from the processing chamber (10) is possible through slots (11R) and (11L) formed in a wall portion (10a) of the processing chamber (10), a gate element (30) which opens and closes the slots (11R) and (11L) from within the processing chamber 10, and transport element(s) for transporting substrates (W) between the processing chamber (10) and the load-lock chambers (20R) and (20L).Type: GrantFiled: August 7, 1995Date of Patent: June 2, 1998Assignee: Plasma System Corp.Inventors: Kenichi Kojima, Tokihiro Ayabe, Takehiko Senoo, Kishichi Haga, Yukio Soejima