Abstract: A physical property value estimation device that estimates a physical property value corresponding to a physical property required for a composite material is provided with a storage unit that stores a learned physical property regression formula corresponding to the physical property in order to calculate a physical property value corresponding to a physical property predetermined as an objective variable, by using compound data of a material that composes the composite material and feature data of the material as explanatory variables, and stores a feature amount value of the material required for calculating the feature data; a reception unit that receives compound data of the material that composes the composite material as an estimation target; and a physical property calculation unit that obtains the physical property regression formula corresponding to the physical property from the storage unit, and calculates the physical property value based on the obtained compound data by using the obtained physic

Abstract: A first synthesized characteristic value calculated based on a first blending ratio of constituent materials contained in a first composite material and on a first characteristic value corresponding to the constituent materials contained in the first composite material, as well as first blending information of the constituent materials contained in the first composite material are used as input parameters (explanatory variables) for an approximate function to estimate a value of physical quantity (objective variable) for the first composite material.

Abstract: A physical quantity estimating system for estimating a value of physical quantity for a composite material is provided. The composite material contains two or more materials included in a plurality of different materials as constituent materials.

Abstract: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Abstract: A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.

Abstract: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Abstract: A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.

Abstract: An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and the p-type cladding layer, the light-emitting portion being formed on a n-type substrate; and a p-type GaP current spreading layer formed on the light-emitting portion. The p-type GaP current spreading layer is doped with Mg and has a root mean square roughness Rms of 15 nm to 5 ?m on its surface.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??) ??(2), and 0.5<?<0.9 ??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: A semiconductor wafer cleaning method has steps of cleaning a surface of a semiconductor wafer with a cleaning solution that has an etching function; and cleaning the surface of the semiconductor wafer with a high-purity organic solvent while circulating the high-purity organic solvent so as to remove Ca and Mg on the surface of the semiconductor wafer.

Abstract: Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.