Abstract: A control apparatus is included in a film forming apparatus that includes: a rotation table disposed in a vacuum container and configured to rotate around a central shaft of a table surface, thereby revolving a substrate on a disposing surface provided on a part of the table surface; a stage configured to rotate around the central shaft of the disposing surface, thereby rotating the substrate on the disposing surface; and a gas supply unit configured to supply a gas into the vacuum container. The control apparatus includes: a display control unit configured to display a setting screen for setting a first parameter that controls a rotation of the substrate; and a process execution unit configured to form a film on the substrate while controlling the rotation of the substrate based on the set first parameter.

Abstract: A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

Abstract: A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

Abstract: There is provided a film forming method including: a modification process of modifying an oxide film formed on a substrate using oxygen radicals generated by a plasma source in a predetermined plasma processing region defined within a processing chamber; and an ignition preparation process of turning an internal state of the predetermined plasma processing region into a state in which plasma is likely to be ignited after the oxide film is formed on the substrate.

Abstract: A plasma generation method is provided to generate and maintain plasma by supplying a predetermined power that is lower than a normal power to a plasma generator. Plasma of an ignition gas is generated by supplying the normal power to the plasma generator. A power input to the plasma generator is decreased by a first power that is smaller than a difference between the normal power and the predetermined power. The power input to the plasma generator is decreased by a second power that is smaller than the first power. Decreasing the power input to the plasma generator by the second power is performed after decreasing the power input to the plasma generator by the first power and is repeated a plurality of times.