Patents by Inventor Takehiro Iida

Takehiro Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5633562
    Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
    Type: Grant
    Filed: October 5, 1994
    Date of Patent: May 27, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kazuyoshi Okano, Takehiro Iida, Tetsuo Murata, Nobuharu Suzuki, Hiroaki Washiyama, Yasushi Watase
  • Patent number: 5623182
    Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.
    Type: Grant
    Filed: April 10, 1996
    Date of Patent: April 22, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kazuyoshi Okano, Takehiro Iida, Tetsuo Murata, Nobuharu Suzuki, Hiroaki Washiyama, Yasushi Watase
  • Patent number: 5463272
    Abstract: A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons by an incident light or emits secondary electrons by an electron input on a base substrate. The average particle size of the particles forming the thin film is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of an excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed over the surface of a plane for the incident light or electron input. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of alkali metal and an antimony metal.
    Type: Grant
    Filed: October 4, 1993
    Date of Patent: October 31, 1995
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Yasushi Watase, Masao Kinoshita, Hiroyuki Watanabe, Takeo Hashimoto, Takehiro Iida, Hiroaki Washiyama