Abstract: Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.

Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.

Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer, the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by ion implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.

Abstract: Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

Abstract: A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.

Abstract: A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.

Abstract: A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.

Abstract: A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.

Abstract: Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by in implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.

Abstract: A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.

Abstract: A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.

Abstract: A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.