Abstract: A SAW element includes a piezoelectric substrate, a support substrate attached to a bottom surface of the piezoelectric substrate, and an IDT electrode on a top surface of the piezoelectric substrate. A resonance frequency and an anti-resonance frequency of a resonator including the IDT electrode are kept between a frequency of a lowest frequency bulk wave spurious and a frequency of a next lowest frequency bulk wave spurious.

Abstract: A SAW element includes a piezoelectric substrate, a support substrate attached to a bottom surface of the piezoelectric substrate, and an IDT electrode on a top surface of the piezoelectric substrate. A resonance frequency and an anti-resonance frequency of a resonator including the IDT electrode are kept between a frequency of a lowest frequency bulk wave spurious and a frequency of a next lowest frequency bulk wave spurious.

Abstract: A filter includes a first signal line connected to one input-side unbalanced signal terminal, a second signal line connected to another output-side unbalanced signal terminal, a shunt circuit for providing connection between the first and second signal lines in parallel with a surface acoustic wave device, a first capacitor disposed in the first signal line so as to be in series with respect to the surface acoustic wave device, a first inductor disposed in the shunt circuit at a side of the first signal line, and a series resonance circuit having a second capacitor and a second inductor disposed in the shunt circuit at a side of the second signal line.

Abstract: Among the plurality of IDT electrodes having serially divided type structures, when designating any three continuously and sequentially arranged IDT electrodes as first, second, and third IDT electrodes in the order of arrangement, electrode fingers are arranged so that a first electrode finger pitch P1 at the boundary between the first IDT electrode and the second IDT electrode in the first region and a second electrode finger pitch P2 at the boundary between the second IDT electrode and the third IDT electrode in the first region are equal, the first and second electrode finger pitches P1 and P2 are the smallest among electrode finger pitches of IDT electrodes in the first region, and each of the IDT electrodes has a third electrode finger pitch P3 larger than the first and second electrode finger pitches P1 and P2 in the first region.

Abstract: An SAW device includes: a piezoelectric substrate 1; a first and a second SAW elements 2, 3 having three or more odd-number IDT electrodes 4-9 and reflector electrodes 10-13 arranged on the piezoelectric substrate 1; lines 16 which cascade-connect the first and the second SAW elements 2, 3; a first unbalanced signal terminal 14 connected to the IDT electrodes 4, 6 arranged at the both ends of the first SAW elements 2; and a second unbalanced signal terminal 15 connected to the IDT electrodes 7, 9 arranged at the both ends of the second SAW element 3. In each of the first and the second SAW elements 2, 3, one bus bar electrode 17 of each of center IDT electrodes 5, 8 is split into two, and non-split bus bar electrodes 18, 19 of at least one center IDT electrode of the first and the second SAW elements 2, 3 are connected to a reference potential electrode and the lines 16 are made to be balanced signal lines.

Abstract: among the plurality of IDT electrodes having serially divided type structures, when designating any three continuously and sequentially arranged IDT electrodes as first, second, and third IDT electrodes in the order of arrangement, electrode fingers are arranged so that a first electrode finger pitch P1 at the boundary between the first IDT electrode and the second IDT electrode in the first region and a second electrode finger pitch P2 at the boundary between the second IDT electrode and the third IDT electrode in the first region are equal, the first and second electrode finger pitches P1 and P2 are the smallest among electrode finger pitches of IDT electrodes in the first region, and each of the IDT electrodes has a third electrode finger pitch P3 larger than the first and second electrode finger pitches P1 and P2 in the first region.

Abstract: A filter includes a first signal line connected to one input-side unbalanced signal terminal, a second signal line connected to another output-side unbalanced signal terminal, a shunt circuit for providing connection between the first and second signal lines in parallel with a surface acoustic wave device, a first capacitor disposed in the first signal line so as to be in series with respect to the surface acoustic wave device, a first inductor disposed in the shunt circuit at a side of the first signal line, and a series resonance circuit having a second capacitor and a second inductor disposed in the shunt circuit at a side of the second signal line.

Abstract: An SAW device includes: a piezoelectric substrate 1; a first and a second SAW elements 2, 3 having three or more odd-number IDT electrodes 4-9 and reflector electrodes 10-13 arranged on the piezoelectric substrate 1; lines 16 which cascade-connect the first and the second SAW elements 2, 3; a first unbalanced signal terminal 14 connected to the IDT electrodes 4, 6 arranged at the both ends of the first SAW elements 2; and a second unbalanced signal terminal 15 connected to the IDT electrodes 7, 9 arranged at the both ends of the second SAW element 3. In each of the first and the second SAW elements 2, 3, one bus bar electrode 17 of each of center IDT electrodes 5, 8 is split into two, and non-split bus bar electrodes 18, 19 of at least one center IDT electrode of the first and the second SAW elements 2, 3 are connected to a reference potential electrode and the lines 16 are made to be balanced signal lines.

Abstract: Signal wiring conductors are provided at opposing positions on the upper surface of the uppermost dielectric layer and on the lower surface of the bottommost dielectric layer, and grounding conductors surrounding grounding-conductor non-forming areas are provided on the upper surfaces of intermediate dielectric layers and the bottommost dielectric layer. These grounding conductors form an electromagnetically shielded space by being connected by grounding-conductor via conductors vertically penetrating the respective dielectric layers around the grounding-conductor non-forming areas, and signal via conductors are so provided in the respective dielectric layers as to penetrate this electromagnetically shielded space.

Abstract: Signal wiring conductors are provided at opposing positions on the upper surface of the uppermost dielectric layer and on the lower surface of the bottommost dielectric layer, and grounding conductors surrounding grounding-conductor non-forming areas are provided on the upper surfaces of intermediate dielectric layers and the bottommost dielectric layer. These grounding conductors form an electromagnetically shielded space by being connected by grounding-conductor via conductors vertically penetrating the respective dielectric layers around the grounding-conductor non-forming areas, and signal via conductors are so provided in the respective dielectric layers as to penetrate this electromagnetically shielded space.

Abstract: A high frequency wave measurement substrate comprising a dielectric substrate, a ground conductor being formed almost all over a bottom surface of the dielectric substrate, a microstrip line signal conductor and an radial stub-like equivalent ground conductor which is placed in proximity to an end of the microstrip line signal conductor being formed on a top surface of the dielectric substrate, a coplanar line structure wafer probe signal conductor and a ground conductor being electrically connected to both the signal conductor and the equivalent ground conductor, wherein the equivalent ground conductor is composed of a semi-circular or fan-shaped radial stub-like conductor pattern in which non-conductor areas are formed in its radial direction.