Abstract: Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over amain surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored.

Abstract: Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over amain surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored.

Abstract: Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over a main surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored.

Abstract: A semiconductor device manufacturing method improves the yield of manufacturing semiconductor devices. There are provided an insulating film for covering multiple bonding pads, a first protective film over the insulating film, and a second protective film over the first protective film. In semiconductor chips, multiple electrode layers are coupled electrically to each of the bonding pads via first openings formed in the insulating film and second openings formed in the first protective film. Multiple bump electrodes are coupled electrically to each of the electrode layers via third openings formed in the second protective film. In pseudo chips, the second openings are formed in the first protective film and the third openings are formed in the second protective film. The insulating film is exposed at the bottom of the second openings coinciding with the third openings. A protective tape is applied to a principal plane to cover the bump electrodes.

Abstract: A semiconductor device manufacturing method improves the yield of manufacturing semiconductor devices. There are provided an insulating film for covering multiple bonding pads, a first protective film over the insulating film, and a second protective film over the first protective film. In semiconductor chips, multiple electrode layers are coupled electrically to each of the bonding pads via first openings formed in the insulating film and second openings formed in the first protective film. Multiple bump electrodes are coupled electrically to each of the electrode layers via third openings formed in the second protective film. In pseudo chips, the second openings are formed in the first protective film and the third openings are formed in the second protective film. The insulating film is exposed at the bottom of the second openings coinciding with the third openings. A protective tape is applied to a principal plane to cover the bump electrodes.

Abstract: Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over a main surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored.