Abstract: Magnetron discharge type sputtering apparatus for sputtering a target with plasma. The apparatus comprises a flat target, a magnetic field application unit disposed in the vicinity of the back surface of said target and rotating means for rotating a magnetic field provided on the surface of the target by said magnetic field application unit. The magnetic field application unit is constructed such that erosion produced in the target by the sputtering tends to be deeper at an edge portion of an erosion area than at a central portion thereof. Further, there is disclosed a method of magnetron plasma discharge type sputtering of a flat target, wherein erosion produced in the target by the sputtering tends to be deeper at an edge portion of the target than at a central portion thereof.

Abstract: In a sputtering apparatus of the type wherein a cathode including a target made of ferromagnetic material and a substrate to be sputtered are disposed in an evacuated vessel in a spaced opposing relationship so as to sputter the target with ions to form thin magnetic films on said substrate, there are provided a magnet disposed on a backing plate, a shield covering surfaces of the magnet facing the substrate, the shield being made of the same or similar material as the target, and a metal block disposed to surround the magnet in contact with the shield and the backing plate. A passage for passing cooling water to cool the above components is further provided in the cathode.