Abstract: A curable resin composition capable of achieving a low refractive material having high solvent resistance. The curable resin composition includes a resin having two types of specific structural units, hollow particles including a shell portion made of a resin, and an organic solvent. The average particle diameter of the hollow particles may be 20 nm or more and 300 nm or less. The content rate of the resin in total solid content in the curable resin composition may be 30% by mass or more and 90% by mass or less.

Abstract: A silicon-containing polymer which results in a composition that forms a coated film having good adhesive properties to a substrate and does not easily peel off the substrate, a film-forming composition including the polymer, a method for forming a silicon-containing polymer coating using the composition, a method for forming a silica-based coating using the composition, and a production method for the polymer. In a silicon-containing polymer including at least one of poly- or oligo-siloxane chain and poly- or oligo-silane chain in a molecular chain, a group having a silyl group and a sulfide group, which can be subjected to a condensation reaction, is introduced into the molecular chain, for example, by an ene-thiol reaction.

Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: To provide a method for removing an organic cured film on a substrate, which can satisfactorily remove the organic cured film formed on the substrate while suppressing damage on a wiring material such as copper, and an acidic cleaning liquid which can be preferably used in the method. When removing an organic cured film on a substrate, the organic cured film is contacted with an acidic cleaning liquid, and an acidic cleaning liquid, which includes sulfuric acid and a water-soluble organic solvent and does not include a compound capable of generating nitronium ions, the content of water being 5% by mass or less, is used as the acidic cleaning liquid.

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.

Abstract: Vacuum deposited thin films of material are used to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nano structured features in a block copolymer film that can serve as lithographic patterns.

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: A resin composition for forming a phase-separated structure includes a block copolymer having a block (b1) having a repeating structure of styrene units; a block (b2) having a repeating structure of methyl methacrylate units partially substituted with a constituent unit represented by general formula (h1); and a number average molecular weight of less than 28,000. In general formula (h1), Rh0 is a hydrophilic functional group.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.

Abstract: A block copolymer containing a first block having a structure represented by general formula (1) shown below (Rs01 and Rs02 each independently represents an organic group, provided that at least one of Rs01 and Rs02 has a polar group; and * represents a valence bond).

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.

Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.

Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.

Abstract: A method of producing a structure containing a phase-separated structure, including forming a layer containing a block copolymer on a substrate; applying a top coat material to the layer containing the block copolymer to form a top coat film; and subjecting the layer including the block copolymer having the top coat film formed thereon to annealing treatment so as to conduct a phase separation of the layer, the top coat material including an organic solvent component and a polymeric compound containing a structural unit having either a dicarboxylic acid or a salt of a dicarboxylic acid, and the organic solvent component containing water and an alcohol having 3 or more carbon atoms.

Abstract: An undercoat agent used for phase separating a layer containing a block copolymer having a block of a structural unit derived from an (?-substituted) acrylate ester on a substrate, and which contains a resin component including a structural unit represented by formula (ba0-1), and/or a structural unit represented by formula (ba0-2), and a structural unit (ba0-3) having a substrate interacting group, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 and R2 represent a halogen atom or an organic group of 1 to 20 carbon atoms which may contain an oxygen atom, a halogen atom, or a silicon atom, and n is 1 to 5.