Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of a smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or by an optical defect-inspecting device, has a configuration wherein an optical microscope that re-detects defects is incorporated, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: An internal defect inspection method where an ultrasonic wave is emitted from an ultrasonic wave transmitter toward a sample, the ultrasonic wave reflected by the sample is detected by an imaging type common-path interferometer as an interference signal, an ultrasonic wave signal is obtained from the interference signal, and any defect within the sample is detected from the ultrasonic wave signal. An internal defect inspection apparatus including an ultrasonic wave transmitter, an imaging type common-path interferometer and an ultrasonic wave signal detecting device is also provided.

Abstract: A scanning probe microscope includes a support member, a light source, and a near-field light detection sensor. The support member supports a probe. The light source causes excitation light to enter the support member. The near-field light detection sensor detects near-field light which is generated at a top of the probe by plasmon excited by the excitation light entering the support member and which is scattered from a surface of a measurement object. A microstructure that guides the excitation light to an excitation point of the plasmon is provided at a portion, which is irradiated with the excitation light, of the support member.

Abstract: Disclosed is a measurement method of a scanning probe microscope based upon a measurement method of a scanning probe microscope for observing a shape and an optical property of a sample by exciting near-field light, scanning relative positions of the near-field light and the sample and detecting scattered light by the sample of the near-field light and having a characteristic that the near-field light is modulated to periodically vary the relative positions of the near-field light and the sample and that a frequency of modulation applied to the near-field light and an interference signal generated at a frequency for varying the relative positions of the near-field light and the sample are selectively extracted.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of a smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or by an optical defect-inspecting device, has a configuration wherein an optical microscope that re-detects defects is incorporated, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: Disclosed is a distance measuring device using an optical comb. In order for the absolute distance to an object to be measured which has a surface with low reflection ratio or a scattering surface and is approximately 10 m apart, to be easily measured with accuracy of 0.1 mm or more using an optical and contactless method, the distance measuring device which measures the distance to the object to be measured is configured such that the distance to the object to be measured is measured by comparing the phase of the beat signal between a light source and a plurality of CW lasers which are reflected or scattered by the object with the phase of the beat signal between the light source and a plurality of CW lasers prior to being irradiated onto the object.

Abstract: The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of a smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or by an optical defect-inspecting device, has a configuration wherein an optical microscope that re-detects defects is incorporated, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope.

Abstract: In a method and an apparatus for inspecting a thermally assisted magnetic recording head element, a specimen is mounted on a table movable in a plane of a scanning probe microscope device, evanescent light is generated from a portion of light emission of evanescent light of the specimen, scattered light of the evanescent light is detected by moving the table in the plane while a cantilever of the scanning probe microscope having a probe is vertically vibrated in the vicinity of a surface of the specimen, and an intensity distribution of the evanescent light emitted from the portion of light emission of evanescent light or a surface profile of the portion of light emission of evanescent light of the specimen is inspected using position information of generation of the evanescent light based on the detected scattered light.

Abstract: Disclosed is a measurement method of a scanning probe microscope based upon a measurement method of a scanning probe microscope for observing a shape and an optical property of a sample by exciting near-field light, scanning relative positions of the near-field light and the sample and detecting scattered light by the sample of the near-field light and having a characteristic that the near-field light is modulated to periodically vary the relative positions of the near-field light and the sample and that a frequency of modulation applied to the near-field light and an interference signal generated at a frequency for varying the relative positions of the near-field light and the sample are selectively extracted.

Abstract: It has been difficult to highly accurately measure the profiles of samples using scanning probe microscopes at the time when scanning is performed due to scanning mechanism fluctuations in the non drive direction, i.e., vertical direction. The present invention is provided with, on the rear side of a sample stage, a high-accuracy displacement gauge for measuring fluctuation in the non drive direction, i.e., vertical direction, at the time when the sample stage is being scanned in the horizontal directions, and as a result, highly accurate planarity evaluation with accuracy of sample nm-order or less is made possible by correcting sample surface shape measurement results obtained using a probe.

Abstract: In a method and an apparatus for inspecting a thermally assisted magnetic recording head element, a specimen is mounted on a table movable in a plane of a scanning probe microscope device, evanescent light is generated from a portion of light emission of evanescent light of the specimen, scattered light of the evanescent light is detected by moving the table in the plane while a cantilever of the scanning probe microscope having a probe is vertically vibrated in the vicinity of a surface of the specimen, and an intensity distribution of the evanescent light emitted from the portion of light emission of evanescent light or a surface profile of the portion of light emission of evanescent light of the specimen is inspected using position information of generation of the evanescent light based on the detected scattered light.

Abstract: It has been difficult to highly accurately measure the profiles of samples using scanning probe microscopes at the time when scanning is performed due to scanning mechanism fluctuations in the non drive direction, i.e., vertical direction. The present invention is provided with, on the rear side of a sample stage, a high-accuracy displacement gauge for measuring fluctuation in the non drive direction, i.e., vertical direction, at the time when the sample stage is being scanned in the horizontal directions, and as a result, highly accurate planarity evaluation with accuracy of sample nm-order or less is made possible by correcting sample surface shape measurement results obtained using a probe.

Abstract: In a method and an apparatus for inspecting a thermally assisted magnetic recording head element, a specimen is mounted on a table movable in a plane of a scanning probe microscope device, evanescent light is generated from a portion of light emission of evanescent light of the specimen, scattered light of the evanescent light is detected by moving the table in the plane while a cantilever of the scanning probe microscope having a probe is vertically vibrated in the vicinity of a surface of the specimen, and an intensity distribution of the evanescent light emitted from the portion of light emission of evanescent light or a surface profile of the portion of light emission of evanescent light of the specimen is inspected using position information of generation of the evanescent light based on the detected scattered light.

Abstract: It is intended to provide an internal defect inspection method and an apparatus for implementing the method by which an ultrasonic wave is excited in a sample without contact with the sample and accordingly without damaging the sample, and an ultrasonic wave from any internal defect of the sample is detected without being affected by the sample surface, in a non-contact state and with high sensitivity. By the internal defect inspection method, an ultrasonic wave is emitted from an ultrasonic wave transmitter toward a sample, an ultrasonic wave reflected by the sample is detected as an interference signal with an imaging type common-path interferometer, an ultrasonic wave signal is obtained from the interference signal, and any defect within the sample is detected from the ultrasonic wave signal.

Abstract: Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.

Abstract: Disclosed is a distance measuring device using an optical comb. In order for the absolute distance to an object to be measured which has a surface with low reflection ratio or a scattering surface and is approximately 10 m apart, to be easily measured with accuracy of 0.1 mm or more using an optical and contactless method, the distance measuring device which measures the distance to the object to be measured is configured such that the distance to the object to be measured is measured by comparing the phase of the beat signal between a light source and a plurality of CW lasers which are reflected or scattered by the object with the phase of the beat signal between the light source and a plurality of CW lasers prior to being irradiated onto the object.