Abstract: A light source section outputs optical flux having two types of wavelength, which are a short wavelength and a long wavelength, while the intensity is made variable. The output from the first light intensity detecting section in irradiating the optical flux having a short wavelength is compared with the output from the first light intensity detecting section in irradiating the optical flux having a long wavelength. A disappearance level near a point where the detected signal from the internal subject disappears is calculated. The first intensity of optical flux having a long wavelength is set to level higher than the disappearance level. Based on the output from the first light intensity detecting section obtained by the optical flux having a long wavelength of the first intensity, a subject inside the body to be detected is measured.

Abstract: A light source section outputs optical flux having two types of wavelength, which are a short wavelength and a long wavelength, while the intensity is made variable. The optical flux is made incident to a detected surface of a body to be detected at a predetermined incident angle simultaneously or alternatively. Based on a type of optical flux outputted from the light source section and an output from a first light intensity detecting section, at least the intensity of the optical flux having a long wavelength outputted from the light source section is adjusted. The output from the first light intensity detecting section in irradiating the optical flux having a short wavelength is compared with the output from the first light intensity detecting section in irradiating the optical flux having a long wavelength.

Abstract: A method and an apparatus of inspecting the surface of a wafer, where two or more kinds of laser are switched or mixed to make the laser incident on the film-coated wafer by a same incident angle, in which inspection data regarding an inspection apparatus and film parameters regarding a film are stored in storage means of the inspection apparatus in an associated state with each other so as to obtain predetermined inspection conditions. When performing each measurement, an operator sets the film parameters of the wafer to be measured by setting means of the inspection apparatus. Thus, desired inspection conditions are automatically set in the inspection apparatus. The film parameters that the operator sets at each measurement are a film thickness and a film refraction index.

Abstract: A method and an apparatus of inspecting the surface of a wafer, where two or more kinds of laser are switched or mixed to make the laser incident on the film-coated wafer by a same incident angle, in which inspection data regarding an inspection apparatus and film parameters regarding a film are stored in storage means of the inspection apparatus in an associated state with each other so as to obtain predetermined inspection conditions. When performing each measurement, an operator sets the film parameters of the wafer to be measured by setting means of the inspection apparatus. Thus, desired inspection conditions are automatically set in the inspection apparatus. The film parameters that the operator sets at each measurement are a film thickness and a film refraction index.