Abstract: A substrate processing apparatus includes a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed at an inner side than the sidewall and configured to open or close the opening, the shutter having a flow path for a temperature-controlled fluid.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

Abstract: A stage includes a base and an electrostatic chuck provided on the base and including N electrodes in the electrostatic chuck, where N is an integer greater than or equal to two. The stage a power supply configured to apply voltages of different N-phases to the respective N electrodes. Each of the voltages has a positive level and a negative level that periodically alternate. A center line of an electrode gap provided between adjacent electrodes is represented by x=x=r·cos(?+2?(n?1)/N) and y=r·sin(?+2?(n?1)/N).

Abstract: There is provided a plasma processing apparatus comprising: a chamber; a mounting stage mounting a substrate and a ring assembly on a periphery of the substrate; a fixation portion fixing at least one of the substrate and the ring assembly to the mounting stage; a heat transfer gas supply supplying heat transfer gas between the mounting stage and at least one of the substrate and the ring assembly; a heat transfer gas exhauster exhausting the heat transfer gas therefrom; an RF power supply supplying an RF signal for plasma generation; and a controller controlling the heat transfer gas supply so that pressure of the heat transfer gas is lower than that at the time of plasma processing for the substrate before performing the plasma processing for the substrate when at least one of the substrate and the ring assembly is mounted on the mounting stage.

Abstract: A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.

Abstract: A stage includes a base, and an electrostatic chuck disposed on the base and including n-pole electrodes therein. N is an integer of two or more. A power source is configured to apply n-phase voltages to the n-pole electrodes. The n of the n-phase corresponds to the n of the n-pole, respectively. The n-phase voltages have different phases from each other. Each of the n-phase voltages periodically switches between positive and negative. Each of the n-pole electrodes is disposed alternately in the electrostatic chuck.

Abstract: A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.

Abstract: There is provision of a substrate processing apparatus including an inner edge ring provided in a vicinity of a substrate to be placed on a stage in a processing chamber; a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism; an outer edge ring arranged outside the middle edge ring; a first spring provided between the inner edge ring and the middle edge ring; and a second spring provided between the middle edge ring and the outer edge ring.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

Abstract: A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

Abstract: A substrate processing apparatus includes a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed at an inner side than the sidewall and configured to open or close the opening, the shutter having a flow path for a temperature-controlled fluid.

Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

Abstract: A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.

Abstract: There is provision of a substrate processing apparatus including an inner edge ring provided in a vicinity of a substrate to be placed on a stage in a processing chamber; a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism; an outer edge ring arranged outside the middle edge ring; a first spring provided between the inner edge ring and the middle edge ring; and a second spring provided between the middle edge ring and the outer edge ring.

Abstract: A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

Abstract: A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.