Abstract: The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

Abstract: A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: Disclosed is a method for manufacturing a glass article including a through hole in a wall of a glass tube. The method includes forming the through hole by heating the glass tube from above with the glass tube arranged such that a tube axis is parallel to a horizontal direction.

Abstract: Disclosed is an apparatus for manufacturing a glass article obtained by heat-processing a glass tube. The apparatus includes a rotation mechanism that rotates the glass tube, a heating device that heats a portion of the glass tube located toward an end of the glass tube rotated by the rotation mechanism, a gripping mechanism that grips the end of the glass tube heated by the heating device, a movement mechanism that moves the gripping mechanism; and a blower that blows air into the glass tube. The glass tube is melt-cut by moving the gripping mechanism, which is gripping the end of the glass tube, with the movement mechanism in a direction that pulls off the end of the glass tube. The glass tube is melt-cut while the blower is operating to form an opening in a melt-cut end surface of the glass tube.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: The present invention is provided with a base electrode layer forming step of forming a base electrode layer by applying and sintering a conductive paste on an end surface of the thermistor element, an oxide layer forming step of forming an oxide layer on a surface of the base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on a surface of the oxide layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion having the base electrode layer and the cover electrode layer is formed and a plating step of forming a metal plating layer on a surface of the cover electrode layer is provided after the conduction heat treatment step.

Abstract: The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

Abstract: Provided are a thermistor element including a conductive intermediate layer containing RuO2 which can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor body 2 made of a thermistor material; a conductive intermediate layer 4 formed on the thermistor body; and an electrode layer 5 formed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuO2 particles that are in electrical contact with each other where SiO2 is placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

Abstract: In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO2 grains in contact with each other are uniformly distributed and SiO2 interposes in gaps between the RuO2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

Abstract: In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO2 grains in contact with each other are uniformly distributed and SiO2 interposes in gaps between the RuO2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

Abstract: Provided are a thermistor element including a conductive intermediate layer containing RuO2 which can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor body 2 made of a thermistor material; a conductive intermediate layer 4 formed on the thermistor body; and an electrode layer 5 formed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuO2 particles that are in electrical contact with each other where SiO2 is placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.

Abstract: This infrared light shielding laminate includes: an ITO particle-containing layer; and an overcoat layer which covers an upper surface of the ITO particle-containing layer, wherein core shell particles are present in a state of being in contact with each other in the ITO particle-containing layer, and the core shell particle includes an ITO particle serving as a core and an insulating material serving as a shell that covers the core.

Abstract: This infrared light shielding laminate includes: an ITO particle-containing layer; and an overcoat layer which covers an upper surface of the ITO particle-containing layer, wherein core shell particles are present in a state of being in contact with each other in the ITO particle-containing layer, and the core shell particle includes an ITO particle serving as a core and an insulating material serving as a shell that covers the core.

Abstract: An ITO film having a band gap in a range of 4.0 eV to 4.5 eV.

Abstract: An ITO film having a band gap in a range of 4.0 eV to 4.5 eV.

Abstract: To provide a heat ray shielding composition having a high transmittance of visible light rays and a high cut rate of near-infrared rays. The heat ray shielding composition of the invention is constituted by mixing one or two or more near-infrared ray-absorbing pigments selected from a group consisting of diimonium-based pigments, phthalocyanine-based pigments and dithiol metal complex pigments in a dispersion liquid formed by dispersing ITO powder in a range of 0.1 mass % to 50 mass % in a range of 0.01 mass to 0.5 mass % with respect to 100 mass % of the dispersion liquid. The ITO powder is used in manufacturing an ITO film which has a band gap in a range of 4.0 eV to 4.5 eV.

Abstract: An ITO film having a band gap in a range of 4.0 eV to 4.5 eV.