Abstract: An accelerator device includes a pedal lever, a reaction force adjuster and a controller. The pedal lever operates according to a stepping operation. The reaction force adjuster is driven by an actuator, and is capable of adjusting a reaction force that is a force in a direction of pushing back the pedal lever. The controller includes a target operation amount setting unit and a drive control unit. The target operation amount setting unit sets a target operation amount, which is an operation amount of the pedal lever according to a vehicle speed. The drive control unit controls a drive of the actuator. The controller controls the reaction force according to the target operation amount so that the operation amount of the pedal lever is within a target range when switching from an automatic drive to a manual drive.

Abstract: A pedal device comprises a brake pedal, an accelerator pedal, a support member and an adjusting device. The brake pedal is operated to be depressed by a leg of a passenger, and an operation amount of a depressing operation of the brake pedal is transmitted as an electrical signal. The accelerator pedal is operated to be depressed by a leg of the passenger, and an operation amount of a depressing operation of the accelerator pedal is transmitted as an electrical signal. The support member is connected with the brake pedal and the accelerator pedal, respectively, to support the brake pedal and the accelerator pedal in a rotatable manner. The adjusting device adjusts a position or a posture of the pedal unit including the brake pedal, the accelerator pedal, and the support member.

Abstract: A method of making a semiconductor including a step of preparing a base substrate; a first step of epitaxially growing a single crystal of a group III nitride semiconductor having a top surface with (0001) plane exposed, directly on the main surface of the base substrate, forming a plurality of concaves composed of inclined interfaces other than the (0001) plane on the top surface, gradually expanding the inclined interfaces toward an upper side of the main surface of the base substrate, making the (0001) plane disappear from the top surface, and growing a first layer whose surface is composed only of the inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, and a semiconductor made thereby.

Abstract: A wearable device that is usable in a plurality of usage forms which has a notification unit that notifies a user of information indicating a recommended usage form out of the plurality of usage forms. the information being determined based on information relating to an external environment.

Abstract: A nitride semiconductor substrate that is constituted by a single crystal of a group III nitride semiconductor and includes a main surface for which the closest low index crystal plane is a (0001) plane includes an inclined interface growth region that has grown with inclined interfaces other than the (0001) plane serving as growth surfaces. A ratio of an area occupied by the inclined interface growth region in the main surface is 80% or more. When a dislocation density is determined based on a dark spot density by observing the main surface in a field of view that is 250 ?m square using a multiphoton excitation microscope, the main surface does not include a region that has a dislocation density higher than 3×106 cm?2, and the main surface includes dislocation-free regions that are 50 ?m square and do not overlap each other, at a density of 100 regions/cm2 or more.

Abstract: A nitride semiconductor substrate that has a diameter of 2 inches or more and includes a main surface for which the closest low index crystal plane is a (0001) plane. The ratio of FWHM1{10-12} to FWHM2{10-12} is 80% or more.

Abstract: An accelerator device includes at least one drive source, a pedal lever, and a power transmission mechanism. The pedal lever is configured to move according to a pedal depressing operation. The power transmission mechanism is configured to transmit force both in the pedal lever's closing direction and opening direction to the pedal lever by driving of the drive source.

Abstract: A method of making a semiconductor including a step of preparing a base substrate; a first step of epitaxially growing a single crystal of a group III nitride semiconductor having a top surface with (0001) plane exposed, directly on the main surface of the base substrate, forming a plurality of concaves composed of inclined interfaces other than the (0001) plane on the top surface, gradually expanding the inclined interfaces toward an upper side of the main surface of the base substrate, making the (0001) plane disappear from the top surface, and growing a first layer whose surface is composed only of the inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, and a semiconductor made thereby.

Abstract: The present invention provides an image display system in which images can be displayed at at least a predetermined framerate even with limited processor performance. The image display system having a head-mounted display capable of displaying a three-dimensional image, the image display system includes a selection unit for selecting a viewing object desired by a viewer from the three-dimensional image, a detection unit for detecting a part to view corresponding to the viewing object selected by the selection unit, and a resolution increasing unit for increasing a resolution of the part to view that has been detected, wherein the head-mounted display displays the three-dimensional image in which the resolution of the part to view has been increased at at least a predetermined framerate.

Abstract: A wearable device that is usable in a plurality of usage forms which has a notification unit that notifies a user of information indicating a recommended usage form out of the plurality of usage forms, the information being determined based on information relating to an external environment.

Abstract: There is provided a nitride semiconductor substrate having a diameter of 2 inches or more and having a main surface whose closest low index crystal plane is a (0001) plane, wherein X-ray locking curve measurement for (0002) plane diffraction, which is performed to the main surface by irradiating with (Cu) K?1 X-rays through a two-crystal monochromator of Ge (220) plane and a slit, reveals that full width at half maximum FWHMb is 32 arcsec or less, and FWHMa?FWHMb obtained by subtracting FWHMb from FWHMa is 30% or less of FWHMa, wherein FWHMa is full width at half maximum of the (0002) plane diffraction when a slit width in ? direction is 1 mm, and FWHMb is full width at half maximum of the (0002) plane diffraction when a slit width in ? direction is 0.1 mm.

Abstract: A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (?m, ?a) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along <1-100> axis, y is a coordinate in a direction along <11-20> axis, (0, 0) represents a coordinate (x, y) of the center, ?m represents a direction component along <1-100> axis in an off-angle of <0001> axis with respect to a normal, ?a represents a direction component along <11-20> axis in the off-angle, (M1, A1) represents a rate of change in the off-angle (?m, ?a) with respect to the position (x, y) in the main surface, and (M2, A2) represents the off-angle (?m, ?a) at the center.

Abstract: A method for manufacturing a nitride semiconductor substrate, including: a step of preparing a base substrate; a step of forming a mask layer having a plurality of openings on the main surface of the base substrate; a first step of growing a first layer whose surface is composed only of inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, wherein in the first step, at least one valley and a plurality of tops are formed at an upper side of each of the plurality of openings of the mask layer by forming a plurality of concaves on a top surface of the single crystal and making the (0001) plane disappear.

Abstract: A method for manufacturing a nitride semiconductor substrate by using a vapor phase growth method includes: a step of preparing a base substrate that is constituted by a material different from a single crystal of a group III nitride semiconductor; a step of growing a base layer on the upper side of the base substrate; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor directly on the base surface of the base layer, the single crystal of the group III nitride semiconductor having a top surface at which a (0001) plane is exposed, and a plurality of recessed portions formed by inclined interfaces other than the (0001) plane being generated in the top surface; and a second step of growing a second layer that has a mirror-finished surface.

Abstract: There is provided a method of manufacturing a crystal substrate, including: preparing a first crystal body which is a substrate comprising a single crystal of group III nitride produced by a vapor phase method and having a first main surface, and in which c-plane of the single crystal is curved in a concave spherical shape with a predetermined curvature; and growing a second crystal body comprising a single crystal of group III nitride on the first main surface, in a mixed melt containing an alkali metal and a group III element.

Abstract: An image processing apparatus that performs processing concerning the display of a stereoscopic image so as to improve the convenience of a user in viewing a stereoscopic image. A head mount display displays a stereoscopic image using image data including a plurality of images having different viewpoints. The image data is processed based on metadata attached to the image data. In a case where information indicating that the image data is associated with a file format which cannot cause the head mount display to perform display is included in the metadata, the image data is converted into a file format which can cause the head mount display to perform display.

Abstract: A wearable device that is usable in a plurality of usage forms which has a notification unit that notifies a user of information indicating a recommended usage form out of the plurality of usage forms, the information being determined based on information relating to an external environment.

Abstract: Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InxAlyGa1-x-yN (where 0?x?1, 0?y?1, 0?x+y?1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cm?1 or more and 4.6 cm?1 or less under a temperature condition of normal temperature.

Abstract: There is provided a nitride crystal substrate comprising group-III nitride crystal and containing n-type impurities, wherein an absorption coefficient ? is approximately expressed by equation (1) in a wavelength range of at least 1 ?m or more and 3.3 ?m or less: ?=n K?a (1) (wherein, ?(?m) is a wavelength, ?(cm?1) is absorption coefficient of the nitride crystal substrate at 27° C., n (cm?3) is a free electron concentration in the nitride crystal substrate, and K and a are constants, satisfying 1.5×10?19?K?6.0×10?19, a=3).

Abstract: An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), and the concentration of B in the crystal is less than 1×1015 at/cm3, and each of the concentrations of O and C in the crystal is less than 1×1015 at/cm3 in a region of 60% or more of a main surface.