Abstract: A semiconductor integrated circuit device is made by stacking a plurality of semiconductor chips. The semiconductor integrated circuit device includes: a penetrating electrode formed to penetrate the plurality of semiconductor chips; a plurality of electrodes formed in respective layers constituting each of the plurality of semiconductor chips and having respective openings within which the penetrating electrode penetrates; and a plurality of vias each of which electrically connects electrodes of the plurality of electrodes located in adjacent layers. The vias are each formed so that the side face thereof is in contact with the penetrating electrode.

Abstract: Provided are: a light-diffusing plate for a liquid crystal display device which plate can give an assured or improved luminance with assured light-diffusibility, suppress itself from dimensional changes caused by moisture absorption, and also prevent the device from deterioration caused by ultraviolet light generated from a lighting unit; and a polycarbonate resin composition for a light-diffusing plate which has both high light transmittivity and light-diffusibility and is excellent in flame retardancy. The present invention is a light-diffusing plate for a liquid crystal display device which plate has a lamination structure comprising two or more kinds of plastic layers; said lamination structure having at least two layers of which are different from each other in refractive index.

Abstract: The problem to be solved by the present invention is to provide a light diffuser plate and a process for production thereof, which light diffuser plate can diffuse light selectively in any desired direction even when the number of cold cathode fluorescent lamps as backlights is reduced and the gap between cold cathode fluorescent lamps is increased, so suppressing luminance unevenness and lamp image with good repeatability in stable way and maintaining high luminance. The present invention is also aimed at providing a backlight unit that possesses similar characteristics.

Abstract: The present invention provides a process for producing a thermoplastic resin sheet with controlled warpage, the process including extruding a thermoplastic resin sheet, while giving mechanically controlled warpage to the sheet at a position where a temperature of the sheet extruded becomes around a grass transition temperature (Tg) of a thermoplastic resin constituting the sheet. In this production process, the sheet is preferably allowed to pass through a pair of warpage-controlling upper and lower rolls at the position, and the mechanically controlled warpage is preferably given to the sheet by selecting shapes of the warpage-controlling rolls and/or by disposing the warpage-controlling rolls on an upper side or a lower side of a height where a flat sheet is obtained. According to this production process, a thermoplastic resin sheet with controlled warpage can be produced simply and easily with high efficiency.

Abstract: A semiconductor integrated circuit device is made by stacking a plurality of semiconductor chips. The semiconductor integrated circuit device includes: a penetrating electrode formed to penetrate the plurality of semiconductor chips; a plurality of electrodes formed in respective layers constituting each of the plurality of semiconductor chips and having respective openings within which the penetrating electrode penetrates; and a plurality of vias each of which electrically connects electrodes of the plurality of electrodes located in adjacent layers. The vias are each formed so that the side face thereof is in contact with the penetrating electrode.

Abstract: A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.

Abstract: The present invention provides a functional thermoplastic resin sheet including a thin film of at least one layer formed on at least one side of a thermoplastic resin sheet by a transfer method, wherein at least one layer of the thin film has functionality. The functional thermoplastic resin sheet of the first invention has a thin film of at least one layer formed on an uneven surface of a thermoplastic resin sheet having the uneven surface by a transfer method. The production process includes transferring, using a transfer film with a thin film of at least one layer formed on a surface of a base film, the thin film to an uneven surface of a thermoplastic resin sheet having the uneven surface, at which when the glass transition temperature of a thermoplastic resin sheet is denoted as Tg, a surface temperature of the thermoplastic resin sheet is in a range of not lower than (Tg?10° C.) and not higher than (Tg+70° C.

Abstract: Provided are: a light-diffusing plate for a liquid crystal display device which plate can give an assured or improved luminance with assured light-diffusibility, suppress itself from dimensional changes caused by moisture absorption, and also prevent the device from deterioration caused by ultraviolet light generated from a lighting unit; and a polycarbonate resin composition for a light-diffusing plate which has both high light transmittivity and light-diffusibility and is excellent in flame retardancy. The present invention is a light-diffusing plate for a liquid crystal display device which plate has a lamination structure comprising two or more kinds of plastic layers; said lamination structure having at least two layers of which are different from each other in refractive index.

Abstract: A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.