Patents by Inventor Takehisa SAITO
Takehisa SAITO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11966657Abstract: An information processing apparatus includes: a receiver configured to receive an input operation of a user; and a display controller configured to display, in a display area having a first area and a second area, an image. The display controller includes: an icon controller configured to display, in the second area, first icons associated one-to-one with different layouts in splitting the first area, and a first splitter configured to split the first area into split areas based on a layout corresponding to a selected first icon to when the receiver receives an input operation for selecting any of the first icons.Type: GrantFiled: December 28, 2020Date of Patent: April 23, 2024Assignee: NTT DOCOMO, INC.Inventors: Kenichirou Matsumura, Kuniichiro Naruse, Keita Saito, Akira Kurosawa, Hiroki Takagaki, Kiwako Miura, Yuki Kobayashi, Takehisa Gokaichi
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Publication number: 20240049379Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
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Patent number: 11832373Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 21, 2022Date of Patent: November 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Publication number: 20230021588Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 21, 2022Publication date: January 26, 2023Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Patent number: 11470712Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 27, 2018Date of Patent: October 11, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Publication number: 20220270851Abstract: There is provided an antenna for inductively coupled plasma excitation. The antenna comprises a plurality of coil assemblies and a conductive plate connected to the plurality of coil assemblies, the conductive plate having a central opening and at least one plate terminal.Type: ApplicationFiled: February 18, 2022Publication date: August 25, 2022Applicant: Tokyo Electron LimitedInventors: Takehisa SAITO, Yohei TAMAZAWA, Toshiki NAKAJIMA, Daisuke KURASHINA, Naoki FUJIWARA
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Publication number: 20220108871Abstract: A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.Type: ApplicationFiled: October 6, 2021Publication date: April 7, 2022Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Naoki Fujiwara, Kaori Fujiwara, Daisuke Kurashina, Yuki Hosaka
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Publication number: 20220005672Abstract: A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicinity of the midpoint is grounded so that the first antenna resonates at a wavelength that is ½ of a wavelength of the RF power. The first antenna includes a first portion close to a first end with reference to a first position separated from the first end by a first distance toward a central portion of the first line, a second portion close to a second end with reference to a second position separated from the second end by a second distance toward the central portion, and a first intermediate portion between the first and second portions.Type: ApplicationFiled: June 29, 2021Publication date: January 6, 2022Inventors: Takehisa SAITO, Yoshihiro UMEZAWA, Naoki FUJIWARA
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Publication number: 20190098740Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
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Patent number: 9765430Abstract: A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.Type: GrantFiled: February 23, 2015Date of Patent: September 19, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takehisa Saito, Takenao Nemoto, Koji Yamagishi, Hiroshi Kaneko
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Publication number: 20170009338Abstract: A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.Type: ApplicationFiled: February 23, 2015Publication date: January 12, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Takehisa SAITO, Takenao NEMOTO, Koji YAMAGISHI, Hiroshi KANEKO
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Patent number: 9543191Abstract: Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C).Type: GrantFiled: February 21, 2013Date of Patent: January 10, 2017Assignees: ZEON CORPORATION, TOHOKU UNIVERSITYInventors: Takenao Nemoto, Takehisa Saito, Yugo Tomita, Hirokazu Matsumoto, Akihide Shirotori, Akinobu Teramoto, Xun Gu
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Patent number: 9378942Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.Type: GrantFiled: September 30, 2013Date of Patent: June 28, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Takehisa Saito, Atsutoshi Inokuchi, Shogo Masuda
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Patent number: 9343270Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.Type: GrantFiled: February 24, 2014Date of Patent: May 17, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Toshihisa Nozawa, Jun Yoshikawa, Michitaka Aita, Masahiro Yamazaki, Takehisa Saito, Fumihiko Kaji, Koji Yamagishi
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Publication number: 20150255258Abstract: Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.Type: ApplicationFiled: June 18, 2013Publication date: September 10, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihisa Nozawa, Masahide Iwasaki, Takenao Nemoto, Yasuo Kobayashi, Takehisa Saito
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Publication number: 20150176125Abstract: Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. The processing gas diffusion mechanism includes a first diffusion chamber and a second diffusion chamber which are provided in multiple stages, and the first diffusion chamber is located above the second diffusion chamber, and the first diffusion chamber and the second diffusion chamber communicate with each other through a plurality of processing gas communication paths.Type: ApplicationFiled: December 18, 2014Publication date: June 25, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihisa NOZAWA, Takehisa SAITO, Koji YAMAGISHI
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Publication number: 20150041983Abstract: Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C).Type: ApplicationFiled: February 21, 2013Publication date: February 12, 2015Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY, ZEON CORPORATIONInventors: Takenao Nemoto, Takehisa Saito, Yugo Tomita, Hirokazu Matsumoto, Akihide Shirotori, Akinobu Teramoto, Xun Gu
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Publication number: 20140238607Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.Type: ApplicationFiled: February 24, 2014Publication date: August 28, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihisa NOZAWA, Jun YOSHIKAWA, Michitaka AITA, Masahiro YAMAZAKI, Takehisa SAITO, Fumihiko KAJI, Koji YAMAGISHI
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Publication number: 20140099734Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.Type: ApplicationFiled: September 30, 2013Publication date: April 10, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Takehisa SAITO, Atsutoshi INOKUCHI, Shogo MASUDA