Abstract: The present invention provides a liquid crystal display device which is capable of achieving excellent wide-viewing-angle characteristics and rapid responsiveness, and is capable of displaying by a display mode which does not require operation for initial bend transition. The present invention relates to one embodiment of a liquid crystal display device including: two substrates at least one of which is transparent; and a p-type nematic liquid crystal disposed between the two substrates, the p-type nematic liquid crystal being aligned perpendicular to the surfaces of the two substrates when no voltage is applied, at least one of the two substrates having a comb-shaped electrode, and the comb-shaped electrode satisfying the relationship (S+1.7)/(S+L)?0.7, wherein L represents an electrode width and S represents an electrode spacing.

Abstract: A liquid crystal panel (10) includes a liquid crystal layer formed with a p-type liquid crystal. The liquid crystal layer exhibits homogeneous orientation while no voltage is applied. Further, an electric field is applied to the liquid crystal layer in a direction same as dipole moments (?) of liquid crystal molecules (3a) to which no voltage is applied. With these arrangements, it is possible to provide a liquid crystal panel and a liquid crystal display device, each of which adopts a new display mode that can achieve a wide viewing angle equivalent to an IPS mode, can achieve a high-speed response like an OCB mode or exceeding the OCB mode, and does not require an initial operation for orientation conversion to the bend orientation.

Abstract: A liquid crystal panel includes: a p-type liquid crystal material sandwiched by a pair of substrates and comb-teeth shape electrodes for applying, to the p-type liquid crystal material, an electric field parallel to a substrate surface. The p-type liquid crystal material is aligned vertically with respect to the substrate surface at the time when no electric field is applied. The comb-teeth shape electrodes have an electrode width of 5 ?m or less, and an electrode spacing of 15 ?m or less. A product of a dielectric constant anisotropy ?? and a refractive index anisotropy ?n of the p-type liquid crystal material is 1.3 or more and 3.1 or less.

Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.

Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

Abstract: A method for forming a transparent conductive film includes the steps of: forming an ITO film on a substrate by sputtering a target including oxygen atoms, indium atoms, and tin atoms under an inert gas atmosphere; patterning the ITO film by selectively removing a prescribed portion of the ITO film using an etching method; and doping the patterned ITO film with oxygen using an ion shower doping method, thereby forming the transparent conductive film from the ITO film.

Abstract: A thin-film transistor circuit for a logic gate circuit includes: an amorphous silicon layer; a driver transistor having a source region, a drain region, and a channel region, the source, drain, and channel regions being formed in the amorphous silicon layer; and a load device formed in the amorphous silicon layer and made of n.sup.- amorphous silicon, the load device being connected to the driver transistor.

Abstract: An active matrix display device which includes a pair of insulating substrates, a first group of buses formed on one of the sides of the insulating substrates, a second group of buses crossing the first group of buses, conductive film wirings formed on the second group of buses, wherein the width of each conductive film wiring at stepped portions of the first group of buses is not smaller than that of the conductive film wirings located out of the stepped portions.