Abstract: Provided is a lubricating oil composition, which has low viscosity but also prolonged anti-shudder life without reduction of intermetallic friction coefficient. The lubricating oil composition is characterized in comprising (A) a lubricating base oil, and (C) (C-1) a borated succinimide compound with a mass average molecular weight of 4,000-7,000 and (C-2) a borated succinimide compound with a mass average molecular weight of greater than 7,000-10,000.

Abstract: A lubricating oil composition which achieves extended anti-shudder durability without causing a decrease in the metal-to-metal friction coefficient, even when the viscosity of the composition is reduced. The lubricating oil composition includes (A) a lubricant base oil, (C) (C-1) a succinimide compound or boronated succinimide compound having a weight-average molecular weight of 4,000 to 7,000, (C-2) a succinimide compound or boronated succinimide compound having a weight-average molecular weight of more than 7,000 to 10,000, and (D) a phosphorus-based extreme pressure agent, the lubricating oil composition does not include zinc dithiophosphate and may optionally include a sulfur-based extreme pressure agent, provided that the content of sulfur-based extreme pressure agent is no more than 0.1 percent by weight of the lubricating oil composition.

Abstract: A lubricant composition which, in a sliding member, is interposed between a DLC-coated surface and another metal member, in particular, a steel material, the lubricant composition having good wear resistance as well as having a better friction reducing effect than conventional molybdenum friction modifier-containing lubricant compositions. The lubricant composition is characterized by containing a lubricating base oil, (A) molybdenum dialkyl dithiophosphate, and (B) zinc dialkyl dithiophosphate, wherein the amount of phosphorus with respect to the total mass of the lubricant composition is 300-1500 mass ppm.

Abstract: The present disclosure is directed to a lubricant composition that achieves extended anti-shudder durability without causing a decrease in the metal-to-metal friction coefficient, even when the viscosity of the composition is reduced. A lubricant composition comprises (A) a lubricant base oil, (C) (C-1) a succinimide compound or boronated succinimide compound having a weight-average molecular weight of 4,000 to 7,000, (C-2) a succinimide compound or boronated succinimide compound having a weight-average molecular weight of more than 7,000 to 10,000, and (D) (D-1) an amide-based friction modifier.

Abstract: Provided is a lubricating oil composition, which has low viscosity but also prolonged anti-shudder life without reduction of intermetallic friction coefficient. The lubricating oil composition is characterized in comprising (A) a lubricating base oil, and (C) (C-1) a borated succinimide compound with a mass average molecular weight of 4,000-7,000 and (C-2) a borated succinimide compound with a mass average molecular weight of greater than 7,000-10,000.

Abstract: An object is to reduce standby power in a data processing device, without loss of convenience, in a structure in which a power supply control device includes the data processing device. In a structure of a power supply control device which supplies power to an external device using a main switch, a data processing device is provided in the power supply control device to control the main switch; a sub-switch supplying power to the data processing device is provided; and a volatile memory unit and a nonvolatile memory unit are provided in the data processing device. Further, the sub-switch is off in a period in which data is stored in the nonvolatile memory unit of the data processing device, so that power supply to the data processing device is intermittently stopped.

Abstract: Objects are to simplify a process for manufacturing a touch panel, reduce manufacturing costs of a touch panel, provide a thin touch panel, increase the visibility of a touch panel, increase the detection sensitivity of a touch panel, provide a lightweight touch panel, and provide a highly reliable touch panel. A touch sensor includes a first substrate, a transistor, a first conductive film, a second conductive film, an insulating film, a third conductive film, and a second substrate. The first conductive film has a region placed between the first substrate and the second conductive film. The insulating film has a region placed between the first conductive film and the second conductive film. The first conductive film, the second conductive film, and the insulating film form a capacitor. The transistor is electrically connected to the second conductive film. The second conductive film is electrically connected to the third conductive film.

Abstract: Objects are to simplify a process for manufacturing a touch panel, reduce manufacturing costs of a touch panel, provide a thin touch panel, increase the visibility of a touch panel, increase the detection sensitivity of a touch panel, provide a lightweight touch panel, and provide a highly reliable touch panel. A touch sensor includes a first substrate, a transistor, a first conductive film, a second conductive film, an insulating film, a third conductive film, and a second substrate. The first conductive film has a region placed between the first substrate and the second conductive film. The insulating film has a region placed between the first conductive film and the second conductive film. The first conductive film, the second conductive film, and the insulating film form a capacitor. The transistor is electrically connected to the second conductive film. The second conductive film is electrically connected to the third conductive film.

Abstract: A power source circuit includes a voltage converter circuit and a control circuit that includes a voltage divider circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor in which an off-state current is increased as temperature is increased, a capacitor that accumulates the off-state current as electric charge, a second oxide semiconductor transistor, and an operational amplifier including a non-inverting input terminal to which a reference voltage is input. The first oxide semiconductor transistor is provided near the voltage converter circuit or an element that generates heat in the control circuit.

Abstract: An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device.

Abstract: It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.

Abstract: An object is to reduce standby power in a data processing device, without loss of convenience, in a structure in which a power supply control device includes the data processing device. In a structure of a power supply control device which supplies power to an external device using a main switch, a data processing device is provided in the power supply control device to control the main switch; a sub-switch supplying power to the data processing device is provided; and a volatile memory unit and a nonvolatile memory unit are provided in the data processing device. Further, the sub-switch is off in a period in which data is stored in the nonvolatile memory unit of the data processing device, so that power supply to the data processing device is intermittently stopped.

Abstract: A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element.

Abstract: It is an object of the present invention to facilitate charge of a battery of a wireless communication device. In addition, it is another object of the present invention to provide a wireless communication device capable of transmitting and receiving individual information without battery replacement which is required due to the power consumption of a battery. A wireless communication device includes a plurality of antenna circuits and a plurality of batteries electrically connected to any one of the plurality of antenna circuits through a switch, where the plurality of batteries are each electrically connected to a different circuit, the plurality of antenna circuits receive electric waves so that the plurality of batteries electrically connected to the plurality of antenna circuits are charged, and at least one of the plurality of antenna circuits receives an electric wave having a different frequency.

Abstract: A power source circuit includes a voltage converter circuit and a control circuit that includes a voltage divider circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor in which an off-state current is increased as temperature is increased, a capacitor that accumulates the off-state current as electric charge, a second oxide semiconductor transistor, and an operational amplifier including a non-inverting input terminal to which a reference voltage is input. The first oxide semiconductor transistor is provided near the voltage converter circuit or an element that generates heat in the control circuit.

Abstract: When an electrode is formed over an organic layer, a temperature is limited because the organic layer can be influenced depending on a temperature in forming the electrode. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. The present invention provides a structure of an organic memory element in which two electrodes are provided in the same layer as two terminals of the memory element, and a layer containing an organic compound is provided between the electrodes. By narrowing a distance between the two electrodes, writing can be performed at low voltage. In addition, a structure of the memory element is simplified, and the area of the memory element can be reduced.

Abstract: An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device.

Abstract: An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device.

Abstract: A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element.

Abstract: A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element.