Abstract: Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.

Abstract: Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.

Abstract: The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.

Abstract: The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.