Abstract: A structure according to an embodiment of the present disclosure include: a first base; a second base disposed to be opposed to the first base; and a bonding layer that is provided between the first base and the second base, and includes, in a layer, a layer including a first metal element and a second metal element, the first metal element having a free energy of oxide formation (?G) of ?330 (kJ/mol of compounds) or more at room temperature and a self-diffusion coefficient (D) of 1×10?55 (m2/s) or more at room temperature, and the second metal element having a free energy of oxide formation (?G) at room temperature smaller than the free energy of oxide formation (?G) at the room temperature of the first metal element.

Abstract: Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength ? can be improved by heating the bonded substrates at a temperature.

Abstract: There is provided a functional element that includes a first substrate, a second substrate disposed to face the first substrate, and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

Abstract: Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.

Abstract: Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength ? can be improved by heating the bonded substrates at a temperature.

Abstract: This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

Abstract: The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

Abstract: A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

Abstract: A structure according to an embodiment of the present disclosure includes: a first substrate; a second substrate opposed to the first substrate; a bonding layer provided between the first substrate and the second substrate; and a first decorative layer provided between the first substrate and the second substrate.

Abstract: A magnetic recording medium with a reduced average grain diameter and reduced grain diameter dispersion is provided. A magnetic recording medium having a magnetic property (magnetic anisotropy energy) applicable as a magnetic recording medium is provided. It is a magnetic recording medium containing a substrate, a grain diameter control layer, a first seed layer, a second seed layer, and a magnetic recording layer containing an ordered alloy in this order, in which the second seed layer is composed of crystal grains having TiN as a main component, and a grain boundary material having at least one or more selected from the group consisting of metal oxides and carbon as a main component.

Abstract: The invention provides a magnetic recording medium including a magnetic layer or a magnetic recording layer having a granular structure in which magnetic crystal grains are well separated from each other. The magnetic recording medium includes a substrate, a seed layer, and a magnetic recording layer, wherein the magnetic recording layer includes a first magnetic layer which is a continuous film consisting of an ordered alloy, and a second magnetic layer having a granular structure consisting of magnetic crystal grains consisting of an ordered alloy and a non-magnetic crystal grain boundary, and the seed layer consists of a material selected from the group consisting of an NaCl-type compound, a spinel-type compound, and a perovskite-type compound.

Abstract: Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.

Abstract: The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg1-xTix)O and a magnetic recording layer including an L10 ordered alloy, and having improved properties. The method for producing a magnetic recording layer according to the present invention includes the steps of: (1) preparing a substrate; (2) forming a seed layer including (Mg1-xTix)O onto the substrate; (3) plasma etching the seed layer in an atmosphere including inert gas; and (4) forming a magnetic recording layer including an ordered alloy onto the seed layer which has been subjected to the step (3).

Abstract: A functional element according to an embodiment of the present disclosure includes: a first substrate; a second substrate disposed to face the first substrate; and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

Abstract: The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L10 ordered alloy suitable to perpendicular magnetic recording. The magnetic recording medium of the present invention includes a substrate, a first seed layer containing Ru, a second seed layer containing ZnO, a third seed layer containing MgO, and a magnetic recording layer containing an ordered alloy, in this order, the first seed layer having the (002)-oriented hexagonal closest packed structure.

Abstract: The present invention aims at providing a magnetic recording medium that can lower a Curie temperature (Tc) of a magnetic material, without increasing an in-plane coercive force and lowering magnetic properties. The magnetic recording medium is a magnetic recording medium comprising a substrate and a magnetic recording layer, the magnetic recording layer comprising an FePtRh ordered alloy, wherein a Rh content in the FePtRh ordered alloy is 10 at % or less.

Abstract: The magnetic recording medium includes at least a nonmagnetic substrate and a magnetic recording layer, the magnetic recording layer consists of a first magnetic recording layer or a plurality of layers including at least the first magnetic recording layer and a second magnetic recording layer, the first magnetic recording layer has a granular structure including a first magnetic crystal grain and a first nonmagnetic crystal grain boundary, the first magnetic crystal grain consists of an ordered alloy having Fe, Pt and Rh, the first nonmagnetic crystal grain boundary consists of carbon, boron or a combination thereof, the second magnetic recording layer has a granular structure including a second magnetic crystal grain and a second nonmagnetic crystal grain boundary, the second magnetic crystal grain consists of an FePt ordered alloy or an ordered alloy having Fe, Pt and Rh, and the second nonmagnetic crystal grain boundary includes carbon.

Abstract: An optical component for optical semiconductor includes a wavelength converting member including a fluorescent part having an upper surface, a lower surface, and one or more lateral surfaces, and containing a fluorescent material, and a light-reflecting part disposed adjacently surrounding the one or more lateral surfaces of the fluorescent part when viewed from above, and a light-transmissive member disposed below the wavelength converting member. A dielectric multilayer film is disposed on an upper surface of the light-transmissive member at least at a region facing the fluorescent part, the dielectric multilayer film is configured to transmit excitation light incident from below the light-transmissive member and to reflect fluorescent light emitted from the fluorescent part. Further, a space is formed between the fluorescent part and the dielectric multilayer film, and the light-reflecting part and the light-transmissive member are connected by a connecting member made of a metal material.