Patents by Inventor Takehito Yoshino
Takehito Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7615115Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: GrantFiled: July 7, 2008Date of Patent: November 10, 2009Assignee: Canon Kabushiki KaishaInventors: Masaki Mizutani, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida
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Publication number: 20090000540Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: ApplicationFiled: July 7, 2008Publication date: January 1, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Masaki MIZUTANI, Katsumi NAKAGAWA, Takehito YOSHINO, Shoji NISHIDA
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Patent number: 7407547Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: GrantFiled: November 10, 2005Date of Patent: August 5, 2008Assignee: Canon Kabushiki KaishaInventors: Masaki Mizutani, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida
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Patent number: 7175706Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.Type: GrantFiled: February 21, 2003Date of Patent: February 13, 2007Assignee: Canon Kabushiki KaishaInventors: Masaki Mizutani, Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki
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Patent number: 7118625Abstract: With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.Type: GrantFiled: October 2, 2003Date of Patent: October 10, 2006Assignee: Canon Kabushiki KaishaInventors: Shoji Nishida, Takehito Yoshino, Masaaki Iwane, Masaki Mizutani
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Publication number: 20060194417Abstract: A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm?3 to 5×1019 cm?3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.Type: ApplicationFiled: October 10, 2003Publication date: August 31, 2006Applicant: Canon Kabushiki KaishaInventors: Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki, Masaki Mizutani
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Patent number: 7022181Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.Type: GrantFiled: December 14, 2001Date of Patent: April 4, 2006Assignee: Canon Kabushiki KaishaInventors: Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Masaki Mizutani
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Patent number: 7014711Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: GrantFiled: March 12, 2003Date of Patent: March 21, 2006Assignee: Canon Kabushiki KaishaInventors: Masaki Mizutani, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida
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Publication number: 20060054078Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: ApplicationFiled: November 10, 2005Publication date: March 16, 2006Applicant: CANON KABUSHIKI KAISHAInventors: Masaki Mizutani, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida
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Patent number: 6953506Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.Type: GrantFiled: October 18, 2001Date of Patent: October 11, 2005Assignee: Canon Kabushiki KaishaInventors: Masaaki Iwane, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
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Patent number: 6951584Abstract: An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.Type: GrantFiled: February 12, 2003Date of Patent: October 4, 2005Assignee: Canon Kabushiki KaishaInventors: Noritaka Ukiyo, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Masaaki Iwane, Masaki Mizutani
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Publication number: 20050124139Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.Type: ApplicationFiled: February 21, 2003Publication date: June 9, 2005Inventors: Masaki Mizutani, Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki
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Patent number: 6872248Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.Type: GrantFiled: March 28, 2003Date of Patent: March 29, 2005Assignee: Canon Kabushiki KaishaInventors: Masaki Mizutani, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida
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Patent number: 6824609Abstract: A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.Type: GrantFiled: August 28, 2002Date of Patent: November 30, 2004Assignee: Canon Kabushiki KaishaInventors: Tetsuro Saito, Katsumi Nakagawa, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Masaki Mizutani
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Patent number: 6802900Abstract: Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.Type: GrantFiled: December 20, 2001Date of Patent: October 12, 2004Assignee: Canon Kabushiki KaishaInventors: Masaaki Iwane, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
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Publication number: 20040118337Abstract: According to the present invention, at the time of growing a silicon film by liquid epitaxy on a substrate, a bulk portion having substantially no void is formed and then a surface portion having plural protrusions that overhang in a lateral direction is formed. As a result, it is possible to form a silicon film having an uneven structure suitable for increasing optical path length on a surface layer of a semiconductor substrate without performing an additional process for forming an uneven structure. Therefore, it is possible to obtain a semiconductor substrate particularly suitable for a solar cell having an improved short circuit current property at low cost. Accordingly, it is possible to provide a solar cell having high efficiency and being low in price.Type: ApplicationFiled: September 26, 2003Publication date: June 24, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Masaki Mizutani, Shunichi Ishihara, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida
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Publication number: 20040065251Abstract: With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.Type: ApplicationFiled: October 2, 2003Publication date: April 8, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Shoji Nishida, Takehito Yoshino, Masaaki Iwane, Masaki Mizutani
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Publication number: 20030230231Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.Type: ApplicationFiled: March 28, 2003Publication date: December 18, 2003Applicant: CANON KABUSHIKI KAISHAInventors: Masaki Mizutani, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida
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Patent number: 6639421Abstract: A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.Type: GrantFiled: October 19, 2000Date of Patent: October 28, 2003Assignee: Canon Kabushiki KaishaInventors: Takehito Yoshino, Takashi Ohtsuka
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Publication number: 20030183154Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.Type: ApplicationFiled: March 12, 2003Publication date: October 2, 2003Inventors: Masaki Mizutani, Katsumi Nakagawa, Takehito Yoshino, Shoji Nishida