Patents by Inventor Takekazu Masui
Takekazu Masui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10526721Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.Type: GrantFiled: March 31, 2014Date of Patent: January 7, 2020Assignees: KOHA CO., LTD., TAMURA CORPORATIONInventors: Shinya Watanabe, Kazuyuki Iizuka, Kei Doioka, Haruka Matsubara, Takekazu Masui
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Patent number: 10196756Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.Type: GrantFiled: June 29, 2015Date of Patent: February 5, 2019Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Shinya Watanabe, Kimiyoshi Koshi, Yu Yamaoka, Kazuyuki Iizuka, Masaru Takizawa, Takekazu Masui
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Patent number: 9926647Abstract: Provided are: a method for producing a ?-Ga2O3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a ?-Ga2O3 substrate includes a step for cutting out a ?-Ga2O3 substrate from a ?-Ga2O3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the ?-Ga2O3 crystal before cutting out the ?-Ga2O3 substrate, or on the cut-out ?-Ga2O3 substrate.Type: GrantFiled: October 12, 2012Date of Patent: March 27, 2018Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Takekazu Masui, Yu Yamaoka
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Patent number: 9926646Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.Type: GrantFiled: October 9, 2013Date of Patent: March 27, 2018Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Shinya Watanabe, Daiki Wakimoto, Kazuyuki Iizuka, Kimiyoshi Koshi, Takekazu Masui
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Patent number: 9915010Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a ?-Ga2O3 single crystal.Type: GrantFiled: May 2, 2014Date of Patent: March 13, 2018Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Kimiyoshi Koshi, Takekazu Masui, Masaru Takizawa
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Patent number: 9903045Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.Type: GrantFiled: October 9, 2013Date of Patent: February 27, 2018Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Shinya Watanabe, Daiki Wakimoto, Kazuyuki Iizuka, Kimiyoshi Koshi, Takekazu Masui
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Publication number: 20170152610Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.Type: ApplicationFiled: June 29, 2015Publication date: June 1, 2017Applicants: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Shinya WATANABE, Kimiyoshi KOSHI, Yu YAMAOKA, Kazuyuki IIZUKA, Masaru TAKIZAWA, Takekazu MASUI
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Patent number: 9431489Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.Type: GrantFiled: February 27, 2015Date of Patent: August 30, 2016Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Kimiyoshi Koshi, Shinya Watanabe, Masaru Takizawa, Yu Yamaoka, Makoto Watanabe, Takekazu Masui
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Publication number: 20160115621Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a ?-Ga2O3 single crystal.Type: ApplicationFiled: May 2, 2014Publication date: April 28, 2016Applicants: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Kimiyoshi KOSHI, Takekazu MASUI, Masaru TAKIZAWA
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Publication number: 20160032485Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.Type: ApplicationFiled: March 31, 2014Publication date: February 4, 2016Applicants: KOHA CO., LTD., TAMURA CORPORATIONInventors: Shinya WATANABE, Kazuyuki IIZUKA, Kei DOIOKA, Haruka MATSUBARA, Takekazu MASUI
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Publication number: 20150380501Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.Type: ApplicationFiled: February 27, 2015Publication date: December 31, 2015Inventors: Kimiyoshi KOSHI, Shinya Watanabe, Masaru Takizawa, Yu Yamaoka, Makoto Watanabe, Takekazu Masui
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Publication number: 20150380500Abstract: A Ga2O3-based single crystal substrate includes a main surface including BOW of not less than ?13 ?m and not more than 0 ?m. The main surface may further include WARP of not more than 25 ?m. The main surface may further include TTV of not more than 10 ?m.Type: ApplicationFiled: February 27, 2015Publication date: December 31, 2015Inventors: Takekazu MASUI, Kimiyoshi KOSHI, Kei DOIOKA, Yu YAMAOKA
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Publication number: 20150308012Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105/cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.Type: ApplicationFiled: October 9, 2013Publication date: October 29, 2015Inventors: Shinya WATANABE, Daiki WAKIMOTO, Kazuyuki IIZUKA, Kimiyoshi KOSHI, Takekazu MASUI
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Publication number: 20140230723Abstract: Provided are: a method for producing a ?-Ga2O3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a ?-Ga2O3 substrate includes a step for cutting out a ?-Ga2O3 substrate from a ?-Ga2O3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the ?-Ga2O3 crystal before cutting out the ?-Ga2O3 substrate, or on the cut-out ?-Ga2O3 substrate.Type: ApplicationFiled: October 12, 2012Publication date: August 21, 2014Applicant: Tamura CorporationInventors: Takekazu Masui, Yu Yamaoka