Patents by Inventor Takemi Ueki

Takemi Ueki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5989981
    Abstract: A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.
    Type: Grant
    Filed: July 2, 1997
    Date of Patent: November 23, 1999
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Sadao Nakashima, Terukazu Ohno, Toshiaki Tsuchiya, Tetsushi Sakai, Shinji Nakamura, Takemi Ueki, Yuichi Kado, Tadao Takeda