Patents by Inventor Takemitsu Kunio

Takemitsu Kunio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal
    Patent number: 5593923
    Abstract: A method of producing a semiconductor device having a refractory metal silicide film includes the steps of implanting ions such as silicon into an active region such as drain/source region to form a damage portion therein, depositing a refractory metal on the damage portion, and annealing to form the refractory metal silicide layer. This silicide layer is formed by the refractory metal being reacted with silicon in the damage portion of the active region.
    Type: Grant
    Filed: May 31, 1995
    Date of Patent: January 14, 1997
    Assignee: NEC Corporation
    Inventors: Tadahiko Horiuchi, Takashi Ishigami, Hiroyuki Nakamura, Tohru Mogami, Hitoshi Wakabayashi, Takemitsu Kunio, Koichiro Okumura