Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: In a gas turbine in which a seal member seals a gap between a transition piece and a nozzle end wall in a turbine first stage, the transition piece and the nozzle end wall has a seal groove. The seal member includes a hook portion that slides in the turbine radial direction with respect to the flange and a seal plate portion inserted in the groove. The groove and the portion are configured to include a surface contact region in which a surface of the groove and the portion are in surface contact with each other, a non-contact region disposed on a side closer to the transition piece than the region, and a hole provided at the portion so as to face the surface in the groove across a gap in the region.

Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: In a gas turbine in which a seal member seals a gap between a transition piece and a nozzle end wall in a turbine first stage, the transition piece and the nozzle end wall has a seal groove. The seal member includes a hook portion that slides in the turbine radial direction with respect to the flange and a seal plate portion inserted in the groove. The groove and the portion are configured to include a surface contact region in which a surface of the groove and the portion are in surface contact with each other, a non-contact region disposed on a side closer to the transition piece than the region, and a hole provided at the portion so as to face the surface in the groove across a gap in the region.

Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: A substrate treatment method that includes circulating a treatment liquid from a treatment vessel through a circulation path extending through a filter and a temperature controller, spouting the treatment liquid toward a substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel, and controlling the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position.

Abstract: A substrate processing apparatus includes a substrate supporting part for supporting a substrate in a horizontal state, an upper nozzle for discharging deionized water as a cleaning solution toward a center portion of an upper surface of the substrate, and a substrate rotating mechanism for rotating the substrate supporting part together with the substrate around a central axis directed in a vertical direction. In the substrate processing apparatus, the plurality of discharge ports are provided in the upper nozzle, and the flow rate of the deionized water to be supplied onto the center portion of the substrate from the upper nozzle can be ensured, with the flow rate of the deionized water from each discharge port reduced. It is thereby possible to perform appropriate cleaning of the upper surface of the substrate while suppressing electrification at the center portion of the substrate.

Abstract: In a substrate processing apparatus, provided are an upper nozzle for supplying a chemical liquid having a temperature higher than that of a substrate onto an upper surface of the substrate and a heating liquid supply nozzle for supplying a heating liquid having a temperature higher than that of the substrate onto a lower surface of the substrate. It is thereby possible to suppress or prevent a decrease in the temperature of the chemical liquid supplied on the upper surface of the substrate from a center portion of the substrate toward an outer peripheral portion thereof. In a supply nozzle, the heating liquid supply nozzle is positioned on the inner side of a heating gas supply nozzle for ejecting heating gas in drying the substrate. It is thereby possible to simplify and downsize a structure used for heating the lower surface of the substrate.

Abstract: In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Abstract: A substrate treating apparatus for treating substrates by immersing the substrates in a treating solution includes the following elements. A treating tank for storing the treating solution; a lifter capable of supporting a plurality of substrates, and vertically movable between an upper withdrawn position above the treating tank and a treating position inside the treating tank; a treating solution supply device for supplying the treating solution to the treating tank; a dripping device for dripping a surfactant to a surface of the treating solution stored in the treating tank; and a control device for causing the treating solution supply device to supply the treating solution to the treating tank, causing the lifter to place the substrates in the treating position, and causing the dripping device to drip the surfactant when raising the lifter to the upper withdrawn position after treatment of the substrates with the treating solution.

Abstract: A substrate treatment apparatus includes a treatment vessel in which a substrate is accommodated, a treatment liquid supply unit, a chamber enclosing the treatment vessel, a substrate holding unit, a circulation unit and a control unit. The circulation unit circulates the treatment liquid from the treatment vessel through a circulation path extending through a filter and a temperature controller and spouts the treatment liquid toward the substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel. The control unit controls the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position.