Patents by Inventor Takenobu Urazono
Takenobu Urazono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Light-emitting diode illumination circuit, illumination device, and liquid crystal display apparatus
Patent number: 7884553Abstract: A light-emitting diode illumination circuit includes light-emitting diodes connected in series and compensating elements connected in parallel with the light-emitting diodes. Each of the compensating elements includes positive and negative terminals and at least one conductor having a predetermined melting point. The conductor melts in the event of open-circuit failure so that the terminals are connected.Type: GrantFiled: May 16, 2007Date of Patent: February 8, 2011Assignee: Sony CorporationInventors: Haruaki Wada, Kunio Oshimo, Takenobu Urazono -
Publication number: 20080106205Abstract: A light-emitting diode illumination circuit includes light-emitting diodes connected in series and compensating elements connected in parallel with the light-emitting diodes. Each of the compensating elements includes positive and negative terminals and at least one conductor having a predetermined melting point. The conductor melts in the event of open-circuit failure so that the terminals are connected.Type: ApplicationFiled: May 16, 2007Publication date: May 8, 2008Applicant: SONY CORPORATIONInventors: Haruaki Wada, Kunio Oshimo, Takenobu Urazono
-
Patent number: 6693258Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change.Type: GrantFiled: February 4, 2002Date of Patent: February 17, 2004Assignee: Sony CorporationInventors: Yukiyasu Sugano, Masahiro Fujino, Michio Mano, Akihiko Asano, Masumitsu Ino, Takenobu Urazono, Makoto Takatoku
-
Patent number: 6632711Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change.Type: GrantFiled: December 8, 2000Date of Patent: October 14, 2003Assignee: Sony CorporationInventors: Yukiyasu Sugano, Masahiro Fujino, Michio Mano, Akihiko Asano, Masumitsu Ino, Takenobu Urazono, Makoto Takatoku
-
Publication number: 20020096680Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change.Type: ApplicationFiled: February 4, 2002Publication date: July 25, 2002Inventors: Yukiyasu Sugano, Masahiro Fujino, Michio Mano, Akihiko Asano, Masumitsu Ino, Takenobu Urazono, Makoto Takatoku
-
Patent number: 6248606Abstract: In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.Type: GrantFiled: December 22, 1998Date of Patent: June 19, 2001Assignee: Sony CorporationInventors: Masumitsu Ino, Hisao Hayashi, Masafumi Kunii, Takenobu Urazono, Shizuo Nishihara, Masahiro Minegishi
-
Publication number: 20010000243Abstract: A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change.Type: ApplicationFiled: December 8, 2000Publication date: April 12, 2001Inventors: Yukiyasu Sugano, Masahiro Fujino, Michio Mano, Akihiko Asano, Masumitsu Ino, Takenobu Urazono, Makoto Takatoku
-
Patent number: 6150692Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element,a hydrogenation treatment which comprises said interlayer insulating layer provided thereon a capping layer for blocking hydrogen diffusion, so that water entrapped by the interlayer insulating layer may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the capping layer.Type: GrantFiled: July 13, 1994Date of Patent: November 21, 2000Assignee: Sony CorporationInventors: Toshihiko Iwanaga, Masumitsu Ino, Kikuo Kaise, Takenobu Urazono, Hiroyuki Ikeda
-
Patent number: 6015720Abstract: Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650.degree. C., for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.Type: GrantFiled: October 18, 1995Date of Patent: January 18, 2000Assignee: Sony CorporationInventors: Masahiro Minegishi, Masumitsu Ino, Masafumi Kunii, Takenobu Urazono, Hisao Hayashi
-
Patent number: 5943107Abstract: A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.Type: GrantFiled: August 3, 1998Date of Patent: August 24, 1999Assignee: Sony CorporationInventors: Hisashi Kadota, Yuko Inoue, Takenobu Urazono, Masafumi Kunii, Shinj Nakamura
-
Patent number: 5932484Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.Type: GrantFiled: October 15, 1997Date of Patent: August 3, 1999Assignee: Sony CorporationInventors: Toshihiko Iwanaga, Masumitsu Ino, Kikuo Kaise, Takenobu Urazono, Hiroyuki Ikeda
-
Patent number: 5888839Abstract: In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.Type: GrantFiled: April 27, 1995Date of Patent: March 30, 1999Assignee: Sony CorporationInventors: Masumitsu Ino, Hisao Hayashi, Masafumi Kunii, Takenobu Urazono, Shizuo Nishihara, Masahiro Minegishi
-
Patent number: 5818550Abstract: A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.Type: GrantFiled: October 18, 1995Date of Patent: October 6, 1998Assignee: Sony CorporationInventors: Hisashi Kadota, Yuko Inoue, Takenobu Urazono, Masafumi Kunii, Shinji Nakamura