Abstract: A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.

Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Abstract: This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.

Abstract: This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer.

Abstract: A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.

Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Abstract: A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.

Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element and a lead-out electrode. The semiconductor light-emitting element has a light-emitting surface of polygonal shape and an electrode formed on the light-emitting surface. The lead-out electrode is connected to the electrode. In the semiconductor light-emitting device, the electrode is formed along at least two sides of the light-emitting surface. In addition, the lead-out electrode is formed on the electrode, and includes an opening portion which opens toward an upper side of the light-emitting surface.

Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Abstract: A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.

Abstract: In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W1 is formed by etching. The current blocking layer has an opening having a width W2 on the upper surface of the ridge portion. The width W2 of the opening is smaller than the width W1 of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.

Abstract: A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 ?m.

Abstract: An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from W2 to W1 as the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width W2 at its lower end and an upper layer having a width W1 lager than the width W2.

Abstract: A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of a transparent substrate. A p electrode is formed on a predetermined region of the p-contact layer. An n electrode having a projected shape is formed on the other surface of the transparent substrate. In this case, a portion, where a projection of the n electrode is arranged, of the device corresponds to the front (a surface on the side of laser light emission) thereof.

Abstract: A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer.

Abstract: In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al0.3Ga0.7N and has an electron concentration of 1×1017 cm−3 and an Al composition greater than 0.1, and the surface thereof is terminated with N.

Abstract: A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate 1 an n-type cladding layer 3, active layer 4 and p-type cladding layer including an upwardly projecting stripe portion 53, an n-type current blocking layer 6 being formed at each of opposite sides of the stripe portion 53. The stripe portion 53 of the p-type cladding layer 5 comprises an upper stripe portion 51 and a lower stripe portion 52. The upper stripe portion 51 has a minimum width W1 at the position of the boundary between the upper and lower stripe portions 51, 52, and the lower stripe portion 52 has at the position of its lower end a width W2 greater than the minimum width W1 of the upper stripe portion 51. This construction realizes a higher yield than in the prior art.