Patents by Inventor Takenori Ishioka

Takenori Ishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11075091
    Abstract: In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: July 27, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Soichiro Umeda, Takenori Ishioka
  • Publication number: 20200395276
    Abstract: A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.
    Type: Application
    Filed: October 26, 2017
    Publication date: December 17, 2020
    Inventors: Soichiro Umeda, Takenori Ishioka
  • Publication number: 20200227279
    Abstract: In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.
    Type: Application
    Filed: October 26, 2017
    Publication date: July 16, 2020
    Inventors: Soichiro Umeda, Takenori Ishioka