Patents by Inventor Takenori Kajiwara

Takenori Kajiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10606164
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
  • Patent number: 10551734
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 4, 2020
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Publication number: 20200033718
    Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.
    Type: Application
    Filed: October 8, 2019
    Publication date: January 30, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Takenori KAJIWARA, Hiroaki SHISHIDO
  • Patent number: 10481486
    Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (?) 2%???30% and generates a phase difference (??) of 150°????200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Takenori Kajiwara, Hiroaki Shishido
  • Patent number: 10481485
    Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Takenori Kajiwara, Ryo Ohkubo
  • Publication number: 20190163047
    Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: HOYA CORPORATION
    Inventors: Takenori KAJIWARA, Ryo OHKUBO, Hiroaki SHISHIDO, Osamu NOZAWA
  • Publication number: 20190064651
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Application
    Filed: October 30, 2018
    Publication date: February 28, 2019
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Publication number: 20190018312
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Application
    Filed: September 20, 2018
    Publication date: January 17, 2019
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Takenori KAJIWARA
  • Patent number: 10146123
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: December 4, 2018
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Patent number: 10114281
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: October 30, 2018
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
  • Patent number: 10083715
    Abstract: A method of manufacturing a perpendicular magnetic disk comprises forming, on a base, a film of a first ground layer made of Ru or a Ru alloy at a first pressure, forming, on the first ground layer, a film of a second ground layer made of Ru or a Ru alloy at a second pressure higher than a first pressure, forming, on the second ground layer, a film of a third ground layer having Ru or a Ru alloy as a main component and an oxide as an accessory component at a third pressure higher than the first pressure and lower than the second pressure, and forming, on a layer above the third ground layer, a film of a granular magnetic layer in which a non-magnetic substance having an oxide is segregated around magnetic particles having an CoCrPt alloy grown in a columnar shape to form a grain boundary.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: September 25, 2018
    Assignee: WD MEDIA (SINGAPORE) PTE.LTD.
    Inventors: Kazuaki Sakamoto, Takenori Kajiwara
  • Publication number: 20180259841
    Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.
    Type: Application
    Filed: May 10, 2016
    Publication date: September 13, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Takenori KAJIWARA, Ryo OHKUBO
  • Publication number: 20180210331
    Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side.
    Type: Application
    Filed: July 11, 2016
    Publication date: July 26, 2018
    Applicant: HOYA CORPORATION
    Inventors: Takenori KAJIWARA, Hiroaki SHISHIDO, Osamu NOZAWA
  • Publication number: 20180149961
    Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (?) 2%???30% and generates a phase difference (??) of 150°????200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.
    Type: Application
    Filed: September 27, 2016
    Publication date: May 31, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Takenori KAJIWARA, Hiroaki SHISHIDO
  • Publication number: 20180143528
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Application
    Filed: August 2, 2016
    Publication date: May 24, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Takenori KAJIWARA
  • Publication number: 20170285458
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Application
    Filed: October 7, 2015
    Publication date: October 5, 2017
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki SHISHIDO, Osamu NOZAWA, Takenori KAJIWARA
  • Patent number: 9240204
    Abstract: A perpendicular magnetic disk is provided. The disk includes, on a base and in the order from bottom, a first granular magnetic layer group including a plurality of magnetic layers each having a granular structure, a non-magnetic layer having Ru or a Ru alloy as a main component, a second granular magnetic layer group including a plurality of magnetic layers each having the granular structure, and an auxiliary recording layer having a CoCrPtRu alloy as a main component. Layers closer to a front surface among the plurality of magnetic layers included in the first granular magnetic layer group having an equal or smaller content of Pt. Layers closer to the front surface among the plurality of magnetic layers included in the second granular magnetic layer group having an equal or smaller content of Pt and having an equal or larger content of an oxide.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: January 19, 2016
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Teiichiro Umezawa, Takenori Kajiwara, Tokichiro Sato
  • Patent number: 9142241
    Abstract: A perpendicular magnetic recording medium comprises a magnetic recording layer that records a signal, an underlayer formed of Ru or Ru compound below the magnetic recording layer, a non-magnetic layer formed of a non-magnetic material below the underlayer to control crystal orientation of the underlayer, a soft magnetic layer provided below the non-magnetic layer, and a substrate on which the magnetic recording layer, the underlayer, the non-magnetic layer, and the soft magnetic layer are formed. The non-magnetic layer comprises a first non-magnetic layer formed above the soft magnetic layer and a second non-magnetic layer formed above the first non-magnetic layer. The first non-magnetic layer is formed of amorphous Ni compound while the second non-magnetic layer is formed of crystalline Ni or crystalline Ni compound.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: September 22, 2015
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Takahiro Onoue, Tokichiro Sato, Takenori Kajiwara
  • Publication number: 20150027877
    Abstract: Provided is a method of manufacturing a magnetic disk comprising a granular magnetic recording layer which causes less noise even with a recording capacity thereof of 250 G or more bits per square inch; and a method for manufacturing the same. The magnetic disk according to the present invention comprises: a granular magnetic recording layer (20) which is formed on a disk substrate 10 directly or via an intermediate layer and which has non-magnetic regions between granular columnar particles; and an auxiliary recording layer (22) which is formed on the granular magnetic recording layer 20 and which causes exchange interaction among the granular columnar particles, wherein the auxiliary recording layer (22) contains 0.1 to 3 moles of oxygen.
    Type: Application
    Filed: October 14, 2014
    Publication date: January 29, 2015
    Inventors: CHIYO SAITO, TOKICHIRO SATO, TAKENORI KAJIWARA
  • Patent number: 8877359
    Abstract: Provided are a magnetic disk comprising a granular magnetic recording layer which causes less noise even with a recording capacity thereof of 250 G or more bits per square inch; and a method for manufacturing the same. The magnetic disk according to the present invention comprises: a granular magnetic recording layer (20) which is formed on a disk substrate 10 directly or via an intermediate layer and which has non-magnetic regions between granular columnar particles; and an auxiliary recording layer (22) which is formed on the granular magnetic recording layer 20 and which causes exchange interaction among the granular columnar particles, wherein the auxiliary recording layer (22) contains 0.1 to 3 moles of oxygen.
    Type: Grant
    Filed: December 7, 2009
    Date of Patent: November 4, 2014
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Chiyo Saito, Tokichiro Sato, Takenori Kajiwara