Patents by Inventor Takenori Kajiwara
Takenori Kajiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11054735Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.Type: GrantFiled: June 22, 2017Date of Patent: July 6, 2021Assignee: HOYA CORPORATIONInventors: Takenori Kajiwara, Ryo Ohkubo, Hiroaki Shishido, Osamu Nozawa
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Patent number: 10942441Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.Type: GrantFiled: October 8, 2019Date of Patent: March 9, 2021Assignee: HOYA CORPORATIONInventors: Osamu Nozawa, Takenori Kajiwara, Hiroaki Shishido
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Patent number: 10935881Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side.Type: GrantFiled: July 11, 2016Date of Patent: March 2, 2021Assignee: HOYA CORPORATIONInventors: Takenori Kajiwara, Hiroaki Shishido, Osamu Nozawa
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Patent number: 10606164Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.Type: GrantFiled: September 20, 2018Date of Patent: March 31, 2020Assignee: HOYA CORPORATIONInventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
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Patent number: 10551734Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.Type: GrantFiled: October 30, 2018Date of Patent: February 4, 2020Assignee: HOYA CORPORATIONInventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
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Publication number: 20200033718Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.Type: ApplicationFiled: October 8, 2019Publication date: January 30, 2020Applicant: HOYA CORPORATIONInventors: Osamu NOZAWA, Takenori KAJIWARA, Hiroaki SHISHIDO
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Patent number: 10481486Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (?) 2%???30% and generates a phase difference (??) of 150°????200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.Type: GrantFiled: September 27, 2016Date of Patent: November 19, 2019Assignee: HOYA CORPORATIONInventors: Osamu Nozawa, Takenori Kajiwara, Hiroaki Shishido
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Patent number: 10481485Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.Type: GrantFiled: May 10, 2016Date of Patent: November 19, 2019Assignee: HOYA CORPORATIONInventors: Osamu Nozawa, Takenori Kajiwara, Ryo Ohkubo
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Publication number: 20190163047Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.Type: ApplicationFiled: June 22, 2017Publication date: May 30, 2019Applicant: HOYA CORPORATIONInventors: Takenori KAJIWARA, Ryo OHKUBO, Hiroaki SHISHIDO, Osamu NOZAWA
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Publication number: 20190064651Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.Type: ApplicationFiled: October 30, 2018Publication date: February 28, 2019Applicant: HOYA CORPORATIONInventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
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Publication number: 20190018312Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.Type: ApplicationFiled: September 20, 2018Publication date: January 17, 2019Applicant: HOYA CORPORATIONInventors: Osamu NOZAWA, Hiroaki SHISHIDO, Takenori KAJIWARA
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Patent number: 10146123Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.Type: GrantFiled: October 7, 2015Date of Patent: December 4, 2018Assignee: HOYA CORPORATIONInventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
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Patent number: 10114281Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.Type: GrantFiled: August 2, 2016Date of Patent: October 30, 2018Assignee: HOYA CORPORATIONInventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
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Patent number: 10083715Abstract: A method of manufacturing a perpendicular magnetic disk comprises forming, on a base, a film of a first ground layer made of Ru or a Ru alloy at a first pressure, forming, on the first ground layer, a film of a second ground layer made of Ru or a Ru alloy at a second pressure higher than a first pressure, forming, on the second ground layer, a film of a third ground layer having Ru or a Ru alloy as a main component and an oxide as an accessory component at a third pressure higher than the first pressure and lower than the second pressure, and forming, on a layer above the third ground layer, a film of a granular magnetic layer in which a non-magnetic substance having an oxide is segregated around magnetic particles having an CoCrPt alloy grown in a columnar shape to form a grain boundary.Type: GrantFiled: May 31, 2011Date of Patent: September 25, 2018Assignee: WD MEDIA (SINGAPORE) PTE.LTD.Inventors: Kazuaki Sakamoto, Takenori Kajiwara
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Publication number: 20180259841Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.Type: ApplicationFiled: May 10, 2016Publication date: September 13, 2018Applicant: HOYA CORPORATIONInventors: Osamu NOZAWA, Takenori KAJIWARA, Ryo OHKUBO
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Publication number: 20180210331Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side.Type: ApplicationFiled: July 11, 2016Publication date: July 26, 2018Applicant: HOYA CORPORATIONInventors: Takenori KAJIWARA, Hiroaki SHISHIDO, Osamu NOZAWA
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Publication number: 20180149961Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (?) 2%???30% and generates a phase difference (??) of 150°????200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.Type: ApplicationFiled: September 27, 2016Publication date: May 31, 2018Applicant: HOYA CORPORATIONInventors: Osamu NOZAWA, Takenori KAJIWARA, Hiroaki SHISHIDO
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Publication number: 20180143528Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.Type: ApplicationFiled: August 2, 2016Publication date: May 24, 2018Applicant: HOYA CORPORATIONInventors: Osamu NOZAWA, Hiroaki SHISHIDO, Takenori KAJIWARA
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Publication number: 20170285458Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.Type: ApplicationFiled: October 7, 2015Publication date: October 5, 2017Applicant: HOYA CORPORATIONInventors: Hiroaki SHISHIDO, Osamu NOZAWA, Takenori KAJIWARA
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Patent number: 9240204Abstract: A perpendicular magnetic disk is provided. The disk includes, on a base and in the order from bottom, a first granular magnetic layer group including a plurality of magnetic layers each having a granular structure, a non-magnetic layer having Ru or a Ru alloy as a main component, a second granular magnetic layer group including a plurality of magnetic layers each having the granular structure, and an auxiliary recording layer having a CoCrPtRu alloy as a main component. Layers closer to a front surface among the plurality of magnetic layers included in the first granular magnetic layer group having an equal or smaller content of Pt. Layers closer to the front surface among the plurality of magnetic layers included in the second granular magnetic layer group having an equal or smaller content of Pt and having an equal or larger content of an oxide.Type: GrantFiled: May 20, 2011Date of Patent: January 19, 2016Assignee: WD Media (Singapore) Pte. Ltd.Inventors: Teiichiro Umezawa, Takenori Kajiwara, Tokichiro Sato