Patents by Inventor Takenori Narita
Takenori Narita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10703947Abstract: The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.Type: GrantFiled: May 3, 2018Date of Patent: July 7, 2020Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Tomohiro Iwano, Hirotaka Akimoto, Takenori Narita, Tadahiro Kimura, Daisuke Ryuzaki
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Publication number: 20180251680Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: May 4, 2018Publication date: September 6, 2018Inventors: Tomohiro IWANO, Takenori NARITA, Daisuke RYUZAKI
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Publication number: 20180251664Abstract: The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass%. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: May 3, 2018Publication date: September 6, 2018Inventors: Tomohiro IWANO, Hirotaka AKIMOTO, Takenori NARITA, Tadahiro KIMURA, Daisuke RYUZAKI
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Patent number: 9988573Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: GrantFiled: November 21, 2011Date of Patent: June 5, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Tomohiro Iwano, Takenori Narita, Daisuke Ryuzaki
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Patent number: 9982177Abstract: A slurry includes abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.Type: GrantFiled: January 20, 2011Date of Patent: May 29, 2018Assignee: HITACHI CHEMICAL COMPANY, LTDInventors: Tomohiro Iwano, Hirotaka Akimoto, Takenori Narita, Tadahiro Kimura, Daisuke Ryuzaki
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Patent number: 8778803Abstract: Disclosed is a CMP slurry for silicon film polishing, comprising abrasive grains, an oxidizing agent, a cationic surfactant, and water. This CMP slurry is suitable for the CMP step of a silicon film of semiconductor devices, since it enables to obtain excellent planarity and excellent performance of controlling the remaining film thickness, while improving the yield and reliability of the semiconductor devices. This CMP slurry also enables to reduce the production cost.Type: GrantFiled: June 6, 2008Date of Patent: July 15, 2014Assignee: Hitachi Chemical Company, Ltd.Inventor: Takenori Narita
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Patent number: 8728341Abstract: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.Type: GrantFiled: September 14, 2010Date of Patent: May 20, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Daisuke Ryuzaki, Takenori Narita, Yousuke Hoshi, Tomohiro Iwano
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Publication number: 20130244431Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: January 31, 2013Publication date: September 19, 2013Inventors: Tomohiro IWANO, Takenori NARITA, Daisuke RYUZAKI
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Publication number: 20130143404Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: January 31, 2013Publication date: June 6, 2013Inventors: Tomohiro IWANO, Takenori NARITA, Daisuke RYUZAKI
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Publication number: 20130130501Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: January 31, 2013Publication date: May 23, 2013Inventors: Tomohiro IWANO, Takenori NARITA, Daisuke RYUZAKI
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Publication number: 20120329370Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: November 21, 2011Publication date: December 27, 2012Inventors: Tomohiro Iwano, Takenori Narita, Daisuke Ryuzaki
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Publication number: 20120322346Abstract: The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.Type: ApplicationFiled: January 20, 2011Publication date: December 20, 2012Inventors: Tomohiro Iwano, Hirotaka Akimoto, Takenori Narita, Tadahiro Kimura, Daisuke Ryuzaki
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Publication number: 20120129346Abstract: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.Type: ApplicationFiled: September 14, 2010Publication date: May 24, 2012Inventors: Daisuke Ryuzaki, Takenori Narita, Yousuke Hoshi, Tomohiro Iwano
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Publication number: 20100210184Abstract: Disclosed is a CMP slurry for silicon film polishing, comprising abrasive grains, an oxidizing agent, a cationic surfactant, and water. This CMP slurry is suitable for the CMP step of a silicon film of semiconductor devices, since it enables to obtain excellent planarity and excellent performance of controlling the remaining film thickness, while improving the yield and reliability of the semiconductor devices. This CMP slurry also enables to reduce the production cost.Type: ApplicationFiled: June 6, 2008Publication date: August 19, 2010Inventor: Takenori Narita
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Publication number: 20100001229Abstract: The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.Type: ApplicationFiled: August 26, 2009Publication date: January 7, 2010Inventors: Hiroshi Nakagawa, Toranosuke Ashizawa, Takenori Narita, Masaya Nishiyama
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Patent number: 7554199Abstract: The CMP technology is provided for a damascene wiring structure having a plural-layer wiring that is excellent in flatness and resolvability of Cu residue. An evaluation substrate is provided for evaluating the condition of a CMP that is employed for configuring a semiconductor device having a plurality of wirings in a vertical direction, and the evaluation substrate comprises: a substrate; a first groove formed on the substrate; a second groove formed on the substrate; and wiring material provided in the first groove and the second groove, wherein a depth of the second groove is shallower than that of the first groove.Type: GrantFiled: November 13, 2006Date of Patent: June 30, 2009Assignee: Consortium for Advanced Semiconductor Materials and Related TechnologiesInventors: Takenori Narita, Masaki Ito, Kenji Sameshima
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Publication number: 20070117386Abstract: The CMP technology is provided of providing a damascene wiring structure having a plural-layer wiring that is excellent in flatness and removability of Cu residue. An evaluation substrate is provided for evaluating a condition of a CMP that is employed for configuring a semiconductor device having a plurality of wirings in a vertical direction, and the evaluation substrate comprises: a substrate; a first groove formed on the substrate; a second groove formed on the substrate; and a material of the wiring provided in the first groove and the second groove, wherein a depth of the second groove is shallower than that of the first groove.Type: ApplicationFiled: November 13, 2006Publication date: May 24, 2007Applicant: Consortium for Advanced Semiconductor Materials and Related TechnologiesInventors: Takenori Narita, Masaki Ito, Kenji Sameshima
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Publication number: 20060199021Abstract: The present invention provides a composition comprising (a) a thermally decomposable polymer and (b) a siloxane oligomer evenly dissolved in (c) an organic solvent; a composition comprising (a) a thermally decomposable polymer, (b) a siloxane oligomer, and (c) an organic solvent in which both of the ingredients (a) and (b) are soluble; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith and then heating the resulting film to condense the siloxane oligomer and remove the thermally decomposable polymer; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith, subsequently conducting a first heating step in which the siloxane oligomer is crosslinked while keeping tType: ApplicationFiled: May 10, 2006Publication date: September 7, 2006Inventors: Takenori Narita, Hiroyuki Morisima, Shigeru Nobe, Kazuhiro Enomoto, Haruaki Sakurai, Nobuko Terada
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Publication number: 20040253462Abstract: The present invention provides a composition comprising (a) a thermally decomposable polymer and (b) a siloxane oligomer evenly dissolved in (c) an organic solvent; a composition comprising (a) a thermally decomposable polymer, (b) a siloxane oligomer, and (c)′ an organic solvent in which both of the ingredients (a) and (b) are soluble; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith and then heating the resulting film to condense the siloxane oligomer and remove the thermally decomposable polymer; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith, subsequently conducting a first heating step in which the siloxane oligomer is crosslinked while keType: ApplicationFiled: July 13, 2004Publication date: December 16, 2004Applicant: Hitachi Chemical Co., Ltd.Inventors: Takenori Narita, Hiroyuki Morisima, Shigeru Nobe, Kazuhiro Enomoto, Haruaki Sakurai, Nobuko Terada
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Patent number: 5905117Abstract: A low dielectric resin composition comprising the following components (a) and (b), and the dielectric constant of a coating film formed by this composition being at most 3:(a) a resin having functional groups in its molecule and being soluble in a solvent; and(b) a partially hydrolyzed condensate of alkoxysilanes of the formula R.sup.1.sub.m R.sup.2.sub.n Si(OR.sup.3).sub.4-m-n, wherein each of R.sup.1 and R.sup.2 which may be the same or different, is a non-hydrolyzable group, R.sup.3 is an alkyl group, and m and n are integers of from 0 to 3 satisfying 0.ltoreq.m+n.ltoreq.3.Type: GrantFiled: September 19, 1996Date of Patent: May 18, 1999Assignees: Asahi Glass Company Ltd., Hitachi Chemical Co., Ltd.Inventors: Shunsuke Yokotsuka, Aya Serita, Ko Aosaki, Ikuo Matsukura, Takenori Narita, Hiroyuki Morishima, Shunichiro Uchimura