Abstract: Provided is a multilayer capacitor that can be manufactured with high yields and whose warpage is suppressed. The multilayer capacitor includes two or more laminated bodies which are bonded together, the two or more laminated bodies each including resin layers and metal layers which are alternately laminated a plurality of times in a thickness direction and each being warped and having front and rear surfaces covered with surface layers containing a resin material, one of the front and rear surfaces being formed of a first surface as a smooth surface having no recess portion, another of the front and rear surfaces being formed of a second surface having a recess portion, in which at least two adjacent laminated bodies are bonded together at the first surfaces or the second surfaces. Also provided are a manufacturing method for the multilayer capacitor, and a circuit board and an electronic device which use the multilayer capacitor.

Abstract: Provided is a multilayer capacitor that can be manufactured with a high yield, and wherein the warp thereof can be limited. The multilayer capacitor, manufacturing method thereof, circuit board, and electronic device are characterized by having resin layers and metal layers laminated alternately a plurality of times in the thickness direction, having the front and back faces thereof covered with surface layers containing resin material, having either the front face or the back face comprised of a first face (30) that is a gently sloping face without any recess section, having the other face comprised of a second face (32) with recess sections (34), and characterized by having two or more laminated bodies (20A, 20B), with warps, pasted together, and by further having at least two adjacent laminated bodies (20A, 20B) pasted together with either the first faces (30) thereof, or with the second faces (32) thereof.

Abstract: The present invention relates to a method for producing a multilayered film capacitor prepared by laminating a dielectric layer and a metallic layer comprising aluminum, characterized in comprising a step of treating a capacitor element with a solution containing at least a phosphoric acid compound, especially any one of phosphoric acids, phosphates and phosphoric esters, more specifically an aluminum hydrogenphosphate, or further characterized in that the aluminum hydrogenphosphate is aluminum monohydrogenphosphate (Al2(HPO4)3) or aluminum dihydrogenphosphate (Al(H2PO4)3), or further characterized in comprising a step of heating the capacitor element after the step of treating the capacitor element with the solution containing aluminum hydrogenphosphate, moreover characterized in that the maximum temperature of the surface of the capacitor element, during the step of heating, is from 200° C. to 280° C.