Patents by Inventor Takenori Umeki

Takenori Umeki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering alloy target and method of producing an alloy film
    Patent number: 4963240
    Abstract: The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.
    Type: Grant
    Filed: March 29, 1988
    Date of Patent: October 16, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiharu Fukasawa, Mituo Kawai, Hideo Ishihara, Takenori Umeki, Yasuhisa Oana
  • Highly pure titanium
    Patent number: 4891066
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: July 15, 1988
    Date of Patent: January 2, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami
  • Highly pure titanium and process for producing the same
    Patent number: 4793854
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: May 20, 1987
    Date of Patent: December 27, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami
  • Highly pure titanium
    Patent number: RE34598
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: January 2, 1992
    Date of Patent: May 3, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami