Abstract: The object is to provide a surface emission laser, in which low-current drive is made possible, and a manufacturing method therefor, to provide a light reception element, in which high-speed modulation is made possible, and a manufacturing method therefor, and to provide an optical transceiver module in which optical connection efficiency is improved. An opening portion 5 from the other surface 1b side of the semiconductor substrate 1 to the end portion on the semiconductor substrate 1 side of the light emission portion 2A is formed on the semiconductor substrate 1 of the surface emission laser 100, and a lens 6 made of a transparent resin is formed through the use of the side surface of the opening portion 5.

Abstract: A light-emitting device (1000) includes a light-emitting device section (100) and a waveguide section (200) which transmits light from the light-emitting device section, and the light-emitting device section and the waveguide section are integrally formed on a substrate (10). The light-emitting device section (100) has a transparent anode (20) which form up a light-propagation section and an optical section (12) formed in part of the anode (20) which are formed on the substrate (10), a first dielectric multilayer film (11a), an insulation layer (16) having an opening (16a) facing the optical section (12), a light-emitting layer (14), at least part of which is formed in the opening (16a) of the insulation layer (16), a cathode (22), and a second dielectric multilayer film (11b). The optical section (12) forms a one-dimensional photonic band gap and has a defect section which is set so that the energy level caused by defects is within a specific emission spectrum.

Abstract: The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation, a manufacturing method therefor and a optoelectric integrated circuit using the surface emitting laser and the photodiode. A semiconductor stacked layers 2 stacked on a semiconductor substrate 1 has a light emitting portion 2A and a reinforcing portion 2B formed with a recessed portion 6 provided therebetween, and a p-type ohmic electrode 4 and a n-type ohmic electrode 5 are formed on the top of the reinforcing portion 2B. The p-type ohmic electrode 4 is electrically connected to a p-type contact layer 21 through a contact hole 41a vertically formed in polyimide buried in the recessed portion 6 to permit supply of a current to the light emitting portion 2A in the thickness direction.

Abstract: A light emitting device has a substrate and a light-emitting section formed on the substrate. The light-emitting section includes a light-emitting layer in which light is generated by electro-luminescence, first and second electrodes used to apply electric charges to the light-emitting layer, and first and second dielectric multi-layered films between which the light-emitting layer is interposed. The first and second electrodes are disposed to avoid overlap with a light-emitting region in the light-emitting layer as viewed from a light emitting direction.

Abstract: A light emitting device includes a substrate, and a light emitting element section formed over the substrate. The light emitting element section includes a first light emitting layer in which light is generated due to electroluminescence, one pair of electrode layers used to apply an electric field to the first light emitting layer, a second light emitting layer which absorbs light generated in the first light emitting layer and generates light having a longer wavelength than a wavelength of the absorbed light, and one pair of dielectric multilayer films which are formed under and above the second light emitting layer, respectively. A wavelength range of light which is reflected by the pair of dielectric multilayer films includes a wavelength range of light generated in the second light emitting layer.

Abstract: An elastic copolymer composition which contains a copolymer having a content of polymer units based on vinylidene fluoride as low as from 0.5 to 15 mol %, which is satisfactory in polyol vulcanizability and which gives a vulcanizate excellent in heat resistance and oil resistance. This composition comprises a tetrafluoroethylene (35 to 65 mol %)/propylene (20 to 50 mol %)/vinylidene fluoride (0.5 to 15 mol %) copolymer, an organic quaternary ammonium hydroxide or a salt of an organic quaternary phosphonium compound with a nitrogen-containing heterocyclic compound, an organic polyhydroxy compound, and a metal oxide or a metal hydroxide, and optionally contains an amine compound.

Abstract: A light-emitting device having a light-emitting layer capable of emitting light by electroluminescence, a pair of anode and cathode for applying an electric field to the light-emitting layer, and an optical element for causing light generated in the light-emitting layer to be transmitted in a predetermined direction. The optical element forms an incomplete photonic band capable of inhibiting spontaneous emission of light in one dimension or two dimensions and includes first and second medium layers. Light generated in the light-emitting layer is emitted by inhibiting spontaneous emission in two dimensions by a first optical element and a second optical element.

Abstract: An edge-emitting type light-emitting device (11000, 14000) comprises an organic light-emitting layer (40), a pair of electrode layers (30) and (50) for applying an electric field to the organic light-emitting layer (40), and an optical waveguide which transmits light emitted from the organic light-emitting layer (40) to the edge. The optical waveguide comprises a core layer (20) mainly transmitting light, and cladding layers (10) and (60) having a refractive index lower than that of the ecore layer (20). The core layer (20) may be a layer different from the organic light-emitting layer (40) or may comprise the organic light-emitting layer. A grating (12) is formed in the core layer (20) or in the boundary area between the core layer (20) and the cladding layer (10). A light-emitting device (31000) may comprise an optical fiber section (200). Another embodiment (43000) may comprise a defect and a grating having a one-dimensional periodic refractive index distribution and constituting a photonic band gap.

Abstract: In a method for fabricating distributed reflection multi-layered film mirrors consisting of a plurality of laminated thin films having a different refractive index, the thin films are formed using a liquid phase film formation method. The liquid phase film formation method includes a step of applying thin film materials forming the thin films, and a step of drying the applied the thin film materials. The liquid phase film formation method utilizes an ink jet method. Thin films can be formed in fine patterns with ease and in a short amount of time. Laminated layers with high reliability can be obtained in very fine patterns. The reflection properties such as film thickness and reflectance of distributed reflection multi-layered film mirrors can be controlled with ease.

Abstract: A light-emitting device includes a substrate and a light-emitting device section. The light-emitting device section includes a light-emitting layer capable of emitting light by electroluminescence, a pair of electrode layers for applying an electric field to the light-emitting layer, an optical section for propagating light generated in the light-emitting layer in a specific direction, and an insulation layer disposed between the pair of electrode layers, having an opening formed in part thereof and can function as a current concentrating layer for specifying a region through which current to be supplied to the light-emitting layer flows via a layer in the opening. The optical section has a defect section which forms photonic bandgaps capable of inhibiting a three-dimensional spontaneous emission, and the energy level of the defect section, caused by the defect, is set to be within a specific emission spectrum.

Abstract: Based on binary transmission data 12, a receiver 11 emits electromagnetic waves 13 with modulated plane of polarization into a free space 16. The data propagates along the free space 16 as the azimuth of the plane of polarization. A receiver 17 accepts the electromagnetic wave 13 with modulated plane of polarization discriminates the data based on the state of the plane of polarization, and outputs the binary received data 18. The data and the clock data are transmitted from a plurality of light-emitting units with different polarization states or wavelengths to omit PLL circuits.

Abstract: The present invention provides a surface-emitting laser wherein the transverse modes are controlled and phase-synchronized laser beams are emitted from a plurality of light-emitting portions to produce what appears to be a single laser beam, and a method of fabrication thereof. This laser comprises a columnar portion (20) forming part of a reflective mirror on a light-emitting side, an embedding layer (22) surrounding the periphery of the columnar portion (20), an upper electrode (23) formed on the columnar portion (20) and the embedding layer (22), and an insulating layer (18) formed below the columnar portion (20) and the embedding layer (22).

Abstract: The present invention provides a surface-emitting laser wherein the transverse modes are controlled and phase-synchronized laser beams are emitted from a plurality of light-emitting portions to produce what appears to be a single laser beam, and a method of fabrication thereof. This laser comprises a columnar portion (20) forming part of a reflective mirror on a light-emitting side, an embedding layer (22) surrounding the periphery of the columnar portion (20), an upper electrode (23) formed on the columnar portion (20) and the embedding layer (22), and an insulating layer (18) formed below the columnar portion (20) and the embedding layer (22). A plurality of aperture portions (23a) are formed in the upper electrode (23) above the columnar portion (20), and aperture portions (18a) are formed in the insulation layer (18) at positions corresponding to the aperture portions (23a).

Abstract: A liquid crystal display device has a light source and includes a two-dimensional light-emitting element array plate formed of a plurality of light-emitting elements arranged in a plane array, and a liquid crystal panel having a plurality of pixels. Each of the pixels corresponds to each of the light-emitting elements. A light-projecting portion of each of the light-emitting elements is disposed within a light-transmitting region of the corresponding pixel.

Abstract: In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.

Abstract: A liquid crystal display device has a light source and includes a two-dimensional light-emitting element array plate formed of a plurality of light-emitting elements arranged in a plane array, and a liquid crystal panel having a plurality of pixels. Each of the pixels corresponds to each of the light-emitting elements. A light-projecting portion of each of the light-emitting elements is disposed within a light-transmitting region of the corresponding pixel.

Abstract: An optical pick-up according to the present invention is designed such that laser beams having different polarization directions or different radiation angles are irradiated from laser beam sources formed in a surface emitting laser array to change the effective numerical aperture of an optical element having an objective lens, or the like. An optical pick-up having high capability with an optical disk having a low recording density and a thick substrate according to the CD standard, and an optical disk having a high recording density and a thin substrate according to the DVD standard, can be realized. A plurality of laser beam sources can be formed in a small space by employing a surface emitting laser array, and the numerical aperture of the optical system can be controlled by selecting a laser beam. For this reason, an optical pick-up having compatibility can be realized with an extremely simple arrangement, and a compact and high-performance optical pick-up can be provided at low cost.

Abstract: A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 .mu.

Abstract: A light-sensing device comprises a light source consisting of a semiconductor laser, a light-transmitting optical system having a lens surface and a diffraction grating surface arranged on the optical axis of light emitted from this light source, and a light-receiving detection system that detects any of the emitted light that is reflected from an object to be inspected. This emitted light is diffracted in at least two intersecting directions by the diffraction grating surface.

Abstract: An optical film thickness measurement method and film formation method uses a method of measuring the optical thickness of films by radiating a monitor light beam towards a substrate during the formation of a stack of films on the substrate and measuring the optical film thickness from extreme values in the resultant reflection intensity. This stack of films comprises a first film having a reflectance of at least 98% within a predetermined wavelength range and a second film formed on the first film and having an absorption coefficient of 1000 cm.sup.-1 or less within that predetermined wavelength range. The first film is measured by a first monitor light beam having a predetermined wavelength and the second film is measured by a second monitor light beam having a wavelength that differs from the predetermined wavelength range.