Abstract: An image formation apparatus is disclosed which includes, within an enclosure configured by a pair of substrates placed face to face and an external frame placed between the substrates, an electron source placed on one of the pair of substrates, an image formation material placed on the other substrate, and spacers placed between the substrates, characterized in that the spacers and the external frame is conductive and device is provided for electrically connecting the spacers and the external frame so that the equipotential surfaces between the spacers and the external frame are quasi-parallel when driven.

Abstract: An image formation apparatus is disclosed which includes, within an enclosure configured by a pair of substrates placed face to face and an external frame placed between the substrates, an electron source placed on one of the pair of substrates, an image formation material placed on the other substrate, and spacers placed between the substrates, characterized in that the spacers and the external frame is conductive and device is provided for electrically connecting the spacers and the external frame so that the equipotential surfaces between the spacers and the external frame are quasi-parallel when driven.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: Uniformity of the electron emission characteristics of electron emitting devices is improved. A substrate is formed with row-directional wires and column-directional wires electrically connected to electron emitting devices disposed in a matrix shape and each having electrodes and an electroconductive film. A pseudo row-directional wire is formed at a position X0 between a position X1 of a row-directional wire and a periphery of the substrate, and a pseudo column-directional wire is formed at a position Y0 between a position Y1 of a column-directional wire and a periphery of the substrate. Pseudo electrodes and are electrically connected to the pseudo row-directional wire and pseudo column-directional wire.

Abstract: A method for producing an electron-emitting device having an electroconductive film with an electron-emitting region extending between plural electrodes, includes a step of forming the electron-emitting region in the electroconductive film, including a step of heating the electroconductive film, and a step of energizing the electroconductive film in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: Uniformity of the electron emission characteristics of electron emitting devices is improved. A substrate is formed with row-directional wires and column-directional wires electrically connected to electron emitting devices disposed in a matrix shape and each having electrodes and an electroconductive film. A pseudo row-directional wire is formed at a position X0 between a position X1 of a row-directional wire and a periphery of the substrate, and a pseudo column-directional wire is formed at a position Y0 between a position Y1 of a column-directional wire and a periphery of the substrate. Pseudo electrodes and are electrically connected to the pseudo row-directional wire and pseudo column-directional wire.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.

Abstract: Uniformity of the electron emission characteristics of electron emitting devices is improved. A substrate is formed with row-directional wires and column-directional wires electrically connected to electron emitting devices disposed in a matrix shape and each having electrodes and an electroconductive film. A pseudo row-directional wire is formed at a position X0 between a position X1 of a row-directional wire and a periphery of the substrate, and a pseudo column-directional wire is formed at a position Y0 between a position Y1 of a column-directional wire and a periphery of the substrate. Pseudo electrodes and are electrically connected to the pseudo row-directional wire and pseudo column-directional wire.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: A method for producing an electron-emitting device comprising an electroconductive film having an electron-emitting region between electrodes, wherein a step of forming the electron-emitting region in the electroconductive film comprises a step of heating the electroconductive film and a step of energizing the electroconductive film, in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An image-forming apparatus comprises an electron source and an image-forming member disposed in an envelope. The image-forming member includes a fluorescent film and a metal back covering the fluorescent film. The metal back contains a gettering substance and the gettering substance is irradiated with electron beams emitted from the electron source.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An image-forming apparatus includes an electron source and an image-forming member disposed in an envelope. The image-forming member includes a fluorescent film and a metal back covering the fluorescent film. The metal back contains a gettering substance and the gettering substance is irradiated with electron beams emitted from the electron source.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.

Abstract: An optical semiconductor apparatus having no polarization dependency and an optical communication system using the semiconductor apparatus are provided. In an optical communication system wherein a signal is demultiplexed by using a semiconductor waveguide type filter disposed on a receiver side, two semiconductor lasers disposed on a transmitter side modulate two light signals having different wavelengths using a common modulation signal and transmit the modulated light signals. One of the different wavelengths is accorded, for example, to the TE mode transmission wavelength of the filter, and the other is accorded, for example, to the TM mode transmission wavelength of the filter. On the receiver side, lights at different wavelengths may be branched into two light portions and the branched light portions may be respectively detected by two photodetectors.

Abstract: A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.

Abstract: In an optical receiver of the present invention, an optical signal is split into at least two light portions, and the light portions are respectively received by at least two tunable optical filters. The tunable optical filters are respectively capable of changing their transmission wavelengths. Transmitted lights through the tunable optical filters are received by at least two light receiving elements. The light receiving elements respectively supply outputs. A differential amplifier produces a difference signal from the outputs of the light receiving elements. In an optical FDM-FSK transmission system using the optical receiver, an optical FSK signal is received by utilizing the difference signal. The tracking operation of the tunable optical filters, whose object includes, for example, at least a center optical frequency of the tunable filters, can be readily performed.