Patents by Inventor Takeo Shioya

Takeo Shioya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200124961
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 10620534
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: April 14, 2020
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20190278175
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: August 17, 2018
    Publication date: September 12, 2019
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Publication number: 20190025695
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: August 17, 2018
    Publication date: January 24, 2019
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 10082733
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: September 25, 2018
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20170199453
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: October 21, 2016
    Publication date: July 13, 2017
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Patent number: 9500950
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: November 22, 2016
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Patent number: 9354523
    Abstract: A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: May 31, 2016
    Assignee: JSR Corporation
    Inventors: Yuuko Kiridoshi, Hiroyuki Nii, Tsuyoshi Furukawa, Takeo Shioya
  • Publication number: 20160062237
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: November 5, 2015
    Publication date: March 3, 2016
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Publication number: 20160011513
    Abstract: A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.
    Type: Application
    Filed: July 9, 2015
    Publication date: January 14, 2016
    Applicant: JSR Corporation
    Inventors: Yuuko Kiridoshi, Hiroyuki Nii, Tsuyoshi Furukawa, Takeo Shioya
  • Patent number: 9213236
    Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: December 15, 2015
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Patent number: 8927200
    Abstract: A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: January 6, 2015
    Assignee: JSR Corporation
    Inventors: Kanako Meya, Takeo Shioya, Motoyuki Shima
  • Publication number: 20140162190
    Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.
    Type: Application
    Filed: February 12, 2014
    Publication date: June 12, 2014
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou HARADA, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 8697343
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: April 15, 2014
    Assignee: JSR Corporation
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Harada, Yukio Nishimura, Takeo Shioya
  • Publication number: 20140080066
    Abstract: A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.
    Type: Application
    Filed: October 22, 2013
    Publication date: March 20, 2014
    Applicant: JSR CORPORATION
    Inventors: Kanako MEYA, Takeo SHIOYA, Motoyuki SHIMA
  • Publication number: 20090202945
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: March 23, 2007
    Publication date: August 13, 2009
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Harada, Yukio Nishimura, Takeo Shioya
  • Patent number: 6403288
    Abstract: A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: June 11, 2002
    Assignee: JSR Corporation
    Inventors: Yukio Nishimura, Toshiyuki Kai, Eiichi Kobayashi, Takeo Shioya
  • Patent number: 6337171
    Abstract: A radiation-sensitive resin composition comprising (A) resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: January 8, 2002
    Assignee: JSR Corporation
    Inventors: Eiichi Kobayashi, Yukio Nishimura, Takeo Shioya