Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.

Abstract: An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).

Abstract: An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).

Abstract: In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.

Abstract: In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.

Abstract: In a method for manufacturing a compound semiconductor device, a principal surface of a SiC wafer, on which a compound semiconductor device is located, is bonded to a support substrate with an adhesive having a softening point higher than 200° C. A via hole is formed dry etching, including supplying a fluorine-containing etching gas to a rear side of the SiC wafer. Thereafter, the support substrate and the adhesive are removed. Preferably, the adhesive is formed by reacting one material coating the principal surface of the SiC wafer, and another material coating the support substrate.