Patents by Inventor Takeo Yonehara

Takeo Yonehara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing semiconductor substrate
    Patent number: 5433168
    Abstract: The present invention relates to a method of producing a semiconductor substrate which is suitable for an electronic device or an integrated circuit in the form of dielectric separation or having a single crystal semiconductor layer formed on an insulator.The method comprises the steps of making a silicon substrate porous, forming a silicon single crystal on the porous substrate and oxidizing the porous silicon substrate to form a semiconductor layer having good crystallinity on an insulating support, particularly a support having light transmission.
    Type: Grant
    Filed: May 14, 1993
    Date of Patent: July 18, 1995
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeo Yonehara