Patents by Inventor Takeo Yoshimi

Takeo Yoshimi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming silicon nitride film and product
    Patent number: 4699825
    Abstract: In forming a silicon nitride film by the low-pressure CVD method using a silane gas and ammonia, the reaction pressure is set to lie over a range of from about 0.05 to about 0.25 Torr, enabling a silicon nitride film to be formed, of uniform thickness, highly efficiently even on large wafers, and maintaining high yield, improved uniformity and good quality as a whole without decreasing the film-forming efficiency. Preferably, the reaction pressure is maintained over a range of from 0.1 to 0.2 Torr to further increase the efficiency, while preferably maintaining the temperature over a range of from 700.degree. to 1000.degree. C.
    Type: Grant
    Filed: November 14, 1985
    Date of Patent: October 13, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Sakai, Tetsuya Mizutani, Takeo Yoshimi
  • Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer
    Patent number: 4365264
    Abstract: A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
    Type: Grant
    Filed: May 19, 1981
    Date of Patent: December 21, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Kiichiro Mukai, Seiki Harada, Shin-ichi Muramatsu, Atsushi Hiraiwa, Shigeru Takahashi, Katsuhisa Usami, Seiichi Iwata, Satoru Ito, Takeo Yoshimi